naa a22 4500 510803741 CHVBK 20180411083407.0 cr unu---uuuuu 180411e20131001xx s 000 0 eng 10.1007/s11664-013-2673-1 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2673-1 Low-Dielectric-Loss Barium Strontium Titanate Thin Films with MgO Buffer Layer for Tunable Microwave Devices [Elektronische Daten] [Yanlong Bian, Hui Wang, Jiwei Zhai] The dielectric and microwave properties of Ba0.6Sr0.4TiO3 (BST60) thin films with a MgO buffer layer deposited on Al2O3 substrates were investigated. Insertion of the MgO buffer layer is demonstrated to be an effective approach to fabricate low-dielectric-loss BST thin films. x-Ray pattern analysis indicates that the thin films exhibit good crystalline quality with a pure perovskite phase and that insertion of the MgO buffer layer does not change the crystal structure of BST. The nonlinear dielectric properties of the BST films were measured by using an interdigital capacitor (IDC). At room temperature, the tunability of the BST films with a MgO buffer layer was 24.1% at a frequency of 1MHz with an applied electric field of 80kV/cm. The dielectric loss of the BST thin films is only 0.005 to 0.007 in the frequency range from 20Hz to 2MHz, the same as for BST films prepared on single-crystal MgO substrates. The microwave dielectric properties of the BST thin films were also measured by a vector network analyzer from 50MHz to 10GHz. TMS, 2013 Sol-gel nationallicence BST films nationallicence MgO buffer layer nationallicence dielectric properties nationallicence Bian Yanlong Functional Materials Research Laboratory, Tongji University, Siping Road 1239, 200092, Shanghai, China aut Wang Hui Functional Materials Research Laboratory, Tongji University, Siping Road 1239, 200092, Shanghai, China aut Zhai Jiwei Functional Materials Research Laboratory, Tongji University, Siping Road 1239, 200092, Shanghai, China aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/10(2013-10-01), 2926-2932 0361-5235 42:10<2926 2013 42 11664 https://doi.org/10.1007/s11664-013-2673-1 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2673-1 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Bian Yanlong Functional Materials Research Laboratory, Tongji University, Siping Road 1239, 200092, Shanghai, China aut NATIONALLICENCE 700 1- Wang Hui Functional Materials Research Laboratory, Tongji University, Siping Road 1239, 200092, Shanghai, China aut NATIONALLICENCE 700 1- Zhai Jiwei Functional Materials Research Laboratory, Tongji University, Siping Road 1239, 200092, Shanghai, China aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/10(2013-10-01), 2926-2932 0361-5235 42:10<2926 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer