naa a22 4500 51080375X CHVBK 20180411083407.0 cr unu---uuuuu 180411e20131001xx s 000 0 eng 10.1007/s11664-013-2684-y doi (NATIONALLICENCE)springer-10.1007/s11664-013-2684-y Novel Red-Emitting Microwave-Assisted-SinteredLiSrPO4: Eu3+ Phosphors for Application in Near-UV White Light-Emitting Diodes [Elektronische Daten] [Ru-Yuan Yang, Yu-Ming Peng, Yan-Kuin Su] Novel red-emitting LiSr1−x PO4:xEu3+ phosphors with various concentrations (x=0.03, 0.05, 0.07, 0.1) of Eu3+ ions were synthesized by microwave-assisted sintering at 1200°C for 3h in air. The microstructural and luminescent characteristics of the LiSrPO4:Eu3+ phosphors were investigated and are discussed here. x-Ray diffraction (XRD) results showed that the prepared LiSr1−x PO4:xEu3+ phosphors presented an impurity phase of Eu2O3 when the Eu3+ ions exceeded x=0.05. Photoluminescence (PL) results showed a series of emission states 5D0→7F0, 5D0→7F1, 5D0→7F2, 5D0→7F3, and 5D0→7F4 (corresponding to the typical 4f→4f intraconfiguration forbidden transitions of Eu3+) with a major emission peak at around 617nm. The optimum concentration of Eu3+ for LiSr1−x PO4:xEu3+ prepared by microwave-assisted sintering was found to be 0.05. The lifetime values of LiSr1−x PO4:xEu3+ phosphors with doping concentrations of Eu3+ ions of 0.03, 0.05, 0.07, and 0.1 were found to be 3.32ms, 3.30ms, 2.84ms, and 2.60ms, respectively. Moreover, the chromaticity values (x, y) of all of the LiSr1−x PO4:xEu3+ phosphors were located in the red region (0.65, 0.34). TMS, 2013 Phosphors nationallicence LiSrPO4 nationallicence microwave processing nationallicence luminescence nationallicence Yang Ru-Yuan Graduate Institute of Materials Engineering, National Pingtung University of Science and Technology, 912, Pingtung County, Taiwan aut Peng Yu-Ming Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, 701, Tainan, Taiwan aut Su Yan-Kuin Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, 701, Tainan, Taiwan aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/10(2013-10-01), 2910-2914 0361-5235 42:10<2910 2013 42 11664 https://doi.org/10.1007/s11664-013-2684-y text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2684-y text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Yang Ru-Yuan Graduate Institute of Materials Engineering, National Pingtung University of Science and Technology, 912, Pingtung County, Taiwan aut NATIONALLICENCE 700 1- Peng Yu-Ming Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, 701, Tainan, Taiwan aut NATIONALLICENCE 700 1- Su Yan-Kuin Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, 701, Tainan, Taiwan aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/10(2013-10-01), 2910-2914 0361-5235 42:10<2910 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer