naa a22 4500 510803768 CHVBK 20180411083407.0 cr unu---uuuuu 180411e20131001xx s 000 0 eng 10.1007/s11664-013-2704-y doi (NATIONALLICENCE)springer-10.1007/s11664-013-2704-y Effect of Different Quantum Well Structures on the Output Power Performance of GaN-Based Light-Emitting Diodes [Elektronische Daten] [Jaecheon Han, Gucheol Kang, Daesung Kang, Yongtae Moon, Hwanhee Jeong, June-O Song, Tae-Yeon Seong] We investigated the effect of two different quantum well (QW) structures having different indium contents on the optical performance of fully packaged GaN-based light-emitting diodes (LEDs). Dual-spectrum QW LEDs exhibit ∼4% higher external quantum efficiency (at 350mA) than single-spectrum QW LEDs. However, the two types of LEDs exhibit similar efficiency droop behavior. For both types of LEDs, the output power decreases with increasing junction temperature. When the junction temperature exceeds 70°C, the dual-spectrum QW LEDs exhibit lower output power than the single-spectrum QW LEDs. The wavelength dependence of the output power (at 350mA) of single-spectrum QW LEDs shows that the LEDs with shorter wavelengths experience more rapid optical degradation than the LEDs with longer wavelengths. Based on the wavelength- and junction-temperature-dependent output power, the droop behavior of the dual-spectrum QW LEDs is described and discussed. TMS, 2013 Quantum well nationallicence droop nationallicence light-emitting diode nationallicence GaN nationallicence Han Jaecheon LED Division, LG Innotek Co., Ltd., 413-901, Paju, Korea aut Kang Gucheol LED Division, LG Innotek Co., Ltd., 413-901, Paju, Korea aut Kang Daesung LED Division, LG Innotek Co., Ltd., 413-901, Paju, Korea aut Moon Yongtae LED Division, LG Innotek Co., Ltd., 413-901, Paju, Korea aut Jeong Hwanhee LED Division, LG Innotek Co., Ltd., 413-901, Paju, Korea aut Song June-O LED Division, LG Innotek Co., Ltd., 413-901, Paju, Korea aut Seong Tae-Yeon Department of Nanophotonics, Korea University, 136-713, Seoul, Korea aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/10(2013-10-01), 2876-2880 0361-5235 42:10<2876 2013 42 11664 https://doi.org/10.1007/s11664-013-2704-y text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2704-y text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Han Jaecheon LED Division, LG Innotek Co., Ltd., 413-901, Paju, Korea aut NATIONALLICENCE 700 1- Kang Gucheol LED Division, LG Innotek Co., Ltd., 413-901, Paju, Korea aut NATIONALLICENCE 700 1- Kang Daesung LED Division, LG Innotek Co., Ltd., 413-901, Paju, Korea aut NATIONALLICENCE 700 1- Moon Yongtae LED Division, LG Innotek Co., Ltd., 413-901, Paju, Korea aut NATIONALLICENCE 700 1- Jeong Hwanhee LED Division, LG Innotek Co., Ltd., 413-901, Paju, Korea aut NATIONALLICENCE 700 1- Song June-O LED Division, LG Innotek Co., Ltd., 413-901, Paju, Korea aut NATIONALLICENCE 700 1- Seong Tae-Yeon Department of Nanophotonics, Korea University, 136-713, Seoul, Korea aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/10(2013-10-01), 2876-2880 0361-5235 42:10<2876 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer