naa a22 4500 510803792 CHVBK 20180411083407.0 cr unu---uuuuu 180411e20131001xx s 000 0 eng 10.1007/s11664-013-2686-9 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2686-9 Defect Characterization in Ge/(001)Si Epitaxial Films Grown by Reduced-Pressure Chemical Vapor Deposition [Elektronische Daten] [Jayesh Bharathan, Jagdish Narayan, George Rozgonyi, Gary Bulman] We studied the microstructural characteristics and electrical properties of epitaxial Ge films grown on Si(001) substrates by x-ray diffraction, atomic force microscopy, and transmission electron microscopy. The films were grown using a two-step technique by reduced-pressure chemical vapor deposition, where the first step promotes two-dimensional growth at a lower substrate temperature. We observed a decrease in defect density with increasing film thickness. Ge films with thickness of 3.5μm exhibited threading dislocation densities of 5×106cm−2, which yielded devices with dark current density of 5mAcm−2 (1V reverse bias). We also noted the presence of stacking faults in the form of lines in the films and establish that this is an important defect for Ge films grown by this deposition technique. TMS, 2013 Germanium/(001)silicon epitaxy nationallicence defects nationallicence strain nationallicence reduced-pressure chemical vapor deposition nationallicence Bharathan Jayesh Department of Materials Science and Engineering, North Carolina State University, 27695, Raleigh, NC, USA aut Narayan Jagdish Department of Materials Science and Engineering, North Carolina State University, 27695, Raleigh, NC, USA aut Rozgonyi George Department of Materials Science and Engineering, North Carolina State University, 27695, Raleigh, NC, USA aut Bulman Gary RTI International, 27709, Durham, NC, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/10(2013-10-01), 2888-2896 0361-5235 42:10<2888 2013 42 11664 https://doi.org/10.1007/s11664-013-2686-9 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2686-9 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Bharathan Jayesh Department of Materials Science and Engineering, North Carolina State University, 27695, Raleigh, NC, USA aut NATIONALLICENCE 700 1- Narayan Jagdish Department of Materials Science and Engineering, North Carolina State University, 27695, Raleigh, NC, USA aut NATIONALLICENCE 700 1- Rozgonyi George Department of Materials Science and Engineering, North Carolina State University, 27695, Raleigh, NC, USA aut NATIONALLICENCE 700 1- Bulman Gary RTI International, 27709, Durham, NC, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/10(2013-10-01), 2888-2896 0361-5235 42:10<2888 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer