naa a22 4500 510803822 CHVBK 20180411083407.0 cr unu---uuuuu 180411e20131001xx s 000 0 eng 10.1007/s11664-013-2677-x doi (NATIONALLICENCE)springer-10.1007/s11664-013-2677-x Simultaneous Formation of Ohmic Contactson p +- and n +-4H-SiC Using a Ti/Ni Bilayer [Elektronische Daten] [Sung-Jae Joo, Sangwon Baek, Sang-Cheol Kim, Jeong-Soo Lee] In this work, Ti/Ni bilayer contacts were fabricated on both p +- and n +-4H-SiC formed by ion implantation, and the effects of the Ti interlayer on the contact resistance and interfacial microstructure were studied. Adoption of a thin (10nm) Ti interlayer resulted in specific contact resistance of 4.8μΩcm2 and 1.3mΩcm2 on n +- and p +-4H-SiC, respectively, comparable to the values for contacts using only Ni. Moreover, contacts using Ti/Ni provide a flat and uniform interface between Ni2Si and SiC, whereas discontinuous, agglomerated Ni2Si islands are formed without the use of a Ti interlayer. In addition, the Ti interlayer was demonstrated to effectively dissociate the thin oxide film on SiC, which is advantageous for low-resistance, reliable ohmic contact formation. In summary, use of a Ti/Ni bilayer is a promising solution for one-step formation of ohmic contacts on both p +- and n +-4H-SiC, being especially suitable for SiC n-channel metal-oxide-semiconductor field-effect transistor (nMOSFET) fabrication. TMS, 2013 4H-SiC nationallicence ohmic nationallicence contact nationallicence Ti nationallicence Ni nationallicence Joo Sung-Jae Creative and Fundamental Research Division, Korea Electrotechnology Research Institute, 642-120, Changwon, Korea aut Baek Sangwon Department of Electrical & Electronic Engineering, POSTECH, 790-784, Pohang, Korea aut Kim Sang-Cheol HVDC Research Division, Korea Electrotechnology Research Institute, 642-120, Changwon, Korea aut Lee Jeong-Soo Department of Electrical & Electronic Engineering, POSTECH, 790-784, Pohang, Korea aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/10(2013-10-01), 2897-2904 0361-5235 42:10<2897 2013 42 11664 https://doi.org/10.1007/s11664-013-2677-x text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2677-x text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Joo Sung-Jae Creative and Fundamental Research Division, Korea Electrotechnology Research Institute, 642-120, Changwon, Korea aut NATIONALLICENCE 700 1- Baek Sangwon Department of Electrical & Electronic Engineering, POSTECH, 790-784, Pohang, Korea aut NATIONALLICENCE 700 1- Kim Sang-Cheol HVDC Research Division, Korea Electrotechnology Research Institute, 642-120, Changwon, Korea aut NATIONALLICENCE 700 1- Lee Jeong-Soo Department of Electrical & Electronic Engineering, POSTECH, 790-784, Pohang, Korea aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/10(2013-10-01), 2897-2904 0361-5235 42:10<2897 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer