naa a22 4500 510803849 CHVBK 20180411083407.0 cr unu---uuuuu 180411e20131001xx s 000 0 eng 10.1007/s11664-013-2678-9 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2678-9 Vinod P. Naval Physical and Oceanographic Laboratory, Thrikkakara P.O., 682021, Cochin, India aut Specific Contact Resistance Measurement of Screen-Printed Ag Metal Contacts Formed on Heavily Doped Emitter Region in Multicrystalline Silicon Solar Cells [Elektronische Daten] [P. Vinod] Multicrystalline silicon (mc-Si) wafers are widely used to develop low-cost high-efficiency screen-printed solar cells. In this study, the electrical properties of screen-printed Ag metal contacts formed on heavily doped emitter region in mc-Si solar cells have been investigated. Sintering of the screen-printed metal contacts was performed by a co-firing step at 725°C in air ambient followed by low-temperature annealing at 450°C for 15min. Measurement of the specific contact resistance (ρ c) of the Ag contacts was performed by the three-point probe method, showing a best value of ρ c=1.02×10−4Ωcm2 obtained for the Ag contacts. This value is considered as a good figure of merit for screen-printed Ag electrodes formed on a doped mc-Si surface. The plot of ρ c versus the inverse of the square root of the surface doping level (N s −½ ) follows a linear relationship for impurity doping levels N s≥1019atoms/cm3. The power losses due to current traveling through various resistive components of finished solar cells were calculated by using standard expressions. Cross-sectional scanning electron microscopy (SEM) views of the Ag metal and doped mc-Si region show that the Ag metal is firmly coalesced with the doped mc-Si surface upon sintering at an optimum firing temperature of 725°C. TMS, 2013 Multicrystalline silicon nationallicence screen-printed Ag contacts nationallicence sintering nationallicence barrier potential nationallicence contact resistance nationallicence impurity doping level nationallicence Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/10(2013-10-01), 2905-2909 0361-5235 42:10<2905 2013 42 11664 https://doi.org/10.1007/s11664-013-2678-9 text/html Onlinezugriff via DOI 1 brief-communication jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2678-9 text/html Onlinezugriff via DOI NATIONALLICENCE 100 1- Vinod P. Naval Physical and Oceanographic Laboratory, Thrikkakara P.O., 682021, Cochin, India aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/10(2013-10-01), 2905-2909 0361-5235 42:10<2905 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer