naa a22 4500 510803865 CHVBK 20180411083407.0 cr unu---uuuuu 180411e20131001xx s 000 0 eng 10.1007/s11664-013-2693-x doi (NATIONALLICENCE)springer-10.1007/s11664-013-2693-x An Investigation into III-V Compounds to Reach 20% Efficiency with Minimum Cell Thickness in Ultrathin-Film Solar Cells [Elektronische Daten] [K. Haque, Md. Galib] III-V single-junction solar cells have already achieved very high efficiency levels. However, their use in terrestrial applications is limited by the high fabrication cost. High-efficiency, ultrathin-film solar cells can effectively solve this problem, as their material requirement is minimum. This work presents a comparison among several III-V compounds that have high optical absorption capability as well as optimum bandgap (around 1.4eV) for use as solar cell absorbers. The aim is to observe and compare the ability of these materials to reach a target efficiency level of 20% with minimum possible cell thickness. The solar cell considered has an n-type ZnSe window layer, an n-type Al0.1Ga0.9As emitter layer, and a p-type Ga0.5In0.5P back surface field (BSF) layer. Ge is used as the substrate. In the initial design, a p-type InP base was sandwiched between the emitter and the BSF layer, and the design parameters for the device were optimized by analyzing the simulation outcomes with ADEPT/F, a one-dimensional (1D) simulation tool. Then, the minimum cell thickness that achieves 20% efficiency was determined by observing the efficiency variation with cell thickness. Afterwards, the base material was changed to a few other selected III-V compounds, and for each case, the minimum cell thickness was determined in a similar manner. Finally, these cell thickness values were compared and analyzed to identify more effective base layer materials for III-V single-junction solar cells. TMS, 2013 Ultrathin-film solar cell nationallicence window layer nationallicence optimum bandgap nationallicence absorption coefficient nationallicence absorber nationallicence efficiency nationallicence Haque K. Department of Electrical and Electronics Engineering, Islamic University of Technology, Room409, North Hall, IUT, Board Bazar, 1704, Gazipur, Bangladesh aut Galib Md Department of Electrical and Electronics Engineering, Islamic University of Technology, Room409, North Hall, IUT, Board Bazar, 1704, Gazipur, Bangladesh aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/10(2013-10-01), 2867-2875 0361-5235 42:10<2867 2013 42 11664 https://doi.org/10.1007/s11664-013-2693-x text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2693-x text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Haque K. Department of Electrical and Electronics Engineering, Islamic University of Technology, Room409, North Hall, IUT, Board Bazar, 1704, Gazipur, Bangladesh aut NATIONALLICENCE 700 1- Galib Md Department of Electrical and Electronics Engineering, Islamic University of Technology, Room409, North Hall, IUT, Board Bazar, 1704, Gazipur, Bangladesh aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/10(2013-10-01), 2867-2875 0361-5235 42:10<2867 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer