naa a22 4500 510803873 CHVBK 20180411083408.0 cr unu---uuuuu 180411e20131001xx s 000 0 eng 10.1007/s11664-013-2674-0 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2674-0 Structure and Manufacturing Process of MnO2 Counter Electrode in Niobium Suboxide Capacitors [Elektronische Daten] [Liqin Chen, Bo Li, Zhaoxiong Qi, Hai Guo, Ji Zhou, Longtu Li] The influence of iterative heat treatment of impregnated aqueous Mn(NO3)2 solution on the microstructure of the produced MnO2 has been investigated in the fabrication process for niobium suboxide capacitors. We separate the whole process into two stages: At the early stage of impregnations in Mn(NO3)2 solution (with specific density less than 1.35g/cm3), the produced MnO2 grains with equiaxed nanocrystalline morphology are mainly located in the inner space and pores, avoiding the performance deterioration due to the electrical conductivity anisotropy of columnar texture in NbO capacitors. For impregnation in Mn(NO3)2 solutions with specific density greater than 1.35 g/cm3, MnO2 grains in the inner space and pores continue to grow and present a hexagonal pyramid shape. At this stage, MnO2 starts to be produced on the outer surface of pellets and exhibits a cluster morphology that consists of MnO2 grains with size between 30nm and 80nm. The electrical performance of NbO capacitors has been optimized by adjusting the impregnation times and sequence. By alternately impregnating in Mn(NO3)2 solutions with specific densities of 1.23g/cm3 and 1.35g/cm3, MnO2 grains are better combined and the internal space of the pellets is fully filled. Impregnation in Mn(NO3)2 solutions with low specific densities (1.10g/cm3 and 1.23g/cm3) in dry atmosphere produces a denser MnO2 layer in the internal space, leading to improved capacitor performance. TMS, 2013 Niobium suboxide nationallicence capacitor nationallicence structure nationallicence manganese dioxide nationallicence manufacturing process nationallicence Chen Liqin Advanced Materials Institute, Graduate School at Shenzhen, Tsinghua University, 518055, Shenzhen, People's Republic of China aut Li Bo Advanced Materials Institute, Graduate School at Shenzhen, Tsinghua University, 518055, Shenzhen, People's Republic of China aut Qi Zhaoxiong Shenzhen Sunlord Electronics Co., Ltd., 518110, Shenzhen, People's Republic of China aut Guo Hai Shenzhen Sunlord Electronics Co., Ltd., 518110, Shenzhen, People's Republic of China aut Zhou Ji The State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, 100084, Beijing, People's Republic of China aut Li Longtu The State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, 100084, Beijing, People's Republic of China aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/10(2013-10-01), 2933-2939 0361-5235 42:10<2933 2013 42 11664 https://doi.org/10.1007/s11664-013-2674-0 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2674-0 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Chen Liqin Advanced Materials Institute, Graduate School at Shenzhen, Tsinghua University, 518055, Shenzhen, People's Republic of China aut NATIONALLICENCE 700 1- Li Bo Advanced Materials Institute, Graduate School at Shenzhen, Tsinghua University, 518055, Shenzhen, People's Republic of China aut NATIONALLICENCE 700 1- Qi Zhaoxiong Shenzhen Sunlord Electronics Co., Ltd., 518110, Shenzhen, People's Republic of China aut NATIONALLICENCE 700 1- Guo Hai Shenzhen Sunlord Electronics Co., Ltd., 518110, Shenzhen, People's Republic of China aut NATIONALLICENCE 700 1- Zhou Ji The State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, 100084, Beijing, People's Republic of China aut NATIONALLICENCE 700 1- Li Longtu The State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, 100084, Beijing, People's Republic of China aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/10(2013-10-01), 2933-2939 0361-5235 42:10<2933 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer