naa a22 4500 510803911 CHVBK 20180411083408.0 cr unu---uuuuu 180411e20130401xx s 000 0 eng 10.1007/s11664-012-2462-2 doi (NATIONALLICENCE)springer-10.1007/s11664-012-2462-2 Sensing Mechanism and Behavior of Sputtered ZnCdO Ozone Sensors Enhanced by Photons for Room-Temperature Operation [Elektronische Daten] [J.H. Yu, H.J. Yang, H.S. Mo, T.S. Kim, T.S. Jeong, C. Youn, K. Hong] ZnCdO oxide thin films have been deposited by using the radiofrequency cosputtering method to prepare ozone sensors for room-temperature operation. The sensors were fabricated in the order: electrode/sensor/glass/illuminant. The mechanisms of photo-assisted oxidation and reduction on the surface of the ZnCdO ozone sensors were investigated. Free electrons and holes were generated by exposure of the surface of the ZnCdO ozone sensor to ultraviolet light, tending to enhance surface absorption of dissociated O2 molecules and dissociation of adsorbed oxygen ions, respectively. Thereby, the sensitivity of the ZnCdO ozone sensor was increased. This photon exposure method can replace the conventional heating mode used in ozone sensors. Moreover, 405-nm light from a light-emitting diode, corresponding to photon energy of 3.061eV, was found to assist the processes of oxidation and reduction due to the chemical reaction of the ozone gas. We present a possible route for fabrication of portable ZnCdO ozone sensors for room-temperature operation. TMS, 2013 ZnCdO nationallicence sputtering nationallicence ozone sensor nationallicence photo-assisted oxidation process nationallicence Yu J.H. Semiconductor Physics Research Center (SPRC), School of Semiconductor and Chemical Engineering, Chonbuk National University, 561-756, Jeonju, South Korea aut Yang H.J. Semiconductor Physics Research Center (SPRC), School of Semiconductor and Chemical Engineering, Chonbuk National University, 561-756, Jeonju, South Korea aut Mo H.S. Semiconductor Physics Research Center (SPRC), School of Semiconductor and Chemical Engineering, Chonbuk National University, 561-756, Jeonju, South Korea aut Kim T.S. Semiconductor Physics Research Center (SPRC), School of Semiconductor and Chemical Engineering, Chonbuk National University, 561-756, Jeonju, South Korea aut Jeong T.S. Semiconductor Physics Research Center (SPRC), School of Semiconductor and Chemical Engineering, Chonbuk National University, 561-756, Jeonju, South Korea aut Youn C. Semiconductor Physics Research Center (SPRC), School of Semiconductor and Chemical Engineering, Chonbuk National University, 561-756, Jeonju, South Korea aut Hong K. Department of Physics, Chosun University, 501-759, Gwangju, South Korea aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/4(2013-04-01), 720-725 0361-5235 42:4<720 2013 42 11664 https://doi.org/10.1007/s11664-012-2462-2 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2462-2 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Yu J.H. Semiconductor Physics Research Center (SPRC), School of Semiconductor and Chemical Engineering, Chonbuk National University, 561-756, Jeonju, South Korea aut NATIONALLICENCE 700 1- Yang H.J. Semiconductor Physics Research Center (SPRC), School of Semiconductor and Chemical Engineering, Chonbuk National University, 561-756, Jeonju, South Korea aut NATIONALLICENCE 700 1- Mo H.S. Semiconductor Physics Research Center (SPRC), School of Semiconductor and Chemical Engineering, Chonbuk National University, 561-756, Jeonju, South Korea aut NATIONALLICENCE 700 1- Kim T.S. Semiconductor Physics Research Center (SPRC), School of Semiconductor and Chemical Engineering, Chonbuk National University, 561-756, Jeonju, South Korea aut NATIONALLICENCE 700 1- Jeong T.S. Semiconductor Physics Research Center (SPRC), School of Semiconductor and Chemical Engineering, Chonbuk National University, 561-756, Jeonju, South Korea aut NATIONALLICENCE 700 1- Youn C. Semiconductor Physics Research Center (SPRC), School of Semiconductor and Chemical Engineering, Chonbuk National University, 561-756, Jeonju, South Korea aut NATIONALLICENCE 700 1- Hong K. Department of Physics, Chosun University, 501-759, Gwangju, South Korea aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/4(2013-04-01), 720-725 0361-5235 42:4<720 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer