naa a22 4500 510803938 CHVBK 20180411083408.0 cr unu---uuuuu 180411e20130401xx s 000 0 eng 10.1007/s11664-012-2425-7 doi (NATIONALLICENCE)springer-10.1007/s11664-012-2425-7 Trapping Time Characteristics of Carriers in a-InGaZnO Thin-Film Transistors Fabricated at Low Temperatures for Next-Generation Displays [Elektronische Daten] [Vinh Dao, Thanh Trinh, Kyungsoo Jang, Kyungyul Ryu, Junsin Yi] The effect of low-temperature annealing treatment for various durations on the stability of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors was investigated. By this treatment, IGZO TFTs showed enhanced electrical characteristics and better stability under positive gate bias stress with increasing annealing time up to 18,000s. For all V G stresses at different annealing times, the experimentally measured threshold voltage shift (ΔV th) as a function of stress time was precisely modeled with a stretched-exponential function. ΔV th was generated by carrier trapping, not by defect creation. It was verified that the decrease of interface trap state density (N it) and free carriers resulted in the decrease of ΔV th with increasing annealing time. However, the characteristic trapping time of the carriers increased up to 5.3×103s with increasing annealing time to 7,200s and then decreased, implying that the interface quality between active layer/insulator was deteriorated with further annealing. In this study, successful fabrication of IGZO TFTs by post treatment with optimized duration is demonstrated for flexible display applications. TMS, 2013 Low-temperature thermal treatment nationallicence IGZO thin-film transistor nationallicence double insulators nationallicence trapping time characteristics of carriers nationallicence Dao Vinh Information and Communication Device Laboratory, School of Electronic Electrical Engineering, College of Information and Communication Engineering, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, 440-746, Suwon, South Korea aut Trinh Thanh Information and Communication Device Laboratory, School of Electronic Electrical Engineering, College of Information and Communication Engineering, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, 440-746, Suwon, South Korea aut Jang Kyungsoo Information and Communication Device Laboratory, School of Electronic Electrical Engineering, College of Information and Communication Engineering, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, 440-746, Suwon, South Korea aut Ryu Kyungyul Information and Communication Device Laboratory, School of Electronic Electrical Engineering, College of Information and Communication Engineering, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, 440-746, Suwon, South Korea aut Yi Junsin Information and Communication Device Laboratory, School of Electronic Electrical Engineering, College of Information and Communication Engineering, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, 440-746, Suwon, South Korea aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/4(2013-04-01), 711-715 0361-5235 42:4<711 2013 42 11664 https://doi.org/10.1007/s11664-012-2425-7 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2425-7 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Dao Vinh Information and Communication Device Laboratory, School of Electronic Electrical Engineering, College of Information and Communication Engineering, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, 440-746, Suwon, South Korea aut NATIONALLICENCE 700 1- Trinh Thanh Information and Communication Device Laboratory, School of Electronic Electrical Engineering, College of Information and Communication Engineering, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, 440-746, Suwon, South Korea aut NATIONALLICENCE 700 1- Jang Kyungsoo Information and Communication Device Laboratory, School of Electronic Electrical Engineering, College of Information and Communication Engineering, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, 440-746, Suwon, South Korea aut NATIONALLICENCE 700 1- Ryu Kyungyul Information and Communication Device Laboratory, School of Electronic Electrical Engineering, College of Information and Communication Engineering, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, 440-746, Suwon, South Korea aut NATIONALLICENCE 700 1- Yi Junsin Information and Communication Device Laboratory, School of Electronic Electrical Engineering, College of Information and Communication Engineering, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, 440-746, Suwon, South Korea aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/4(2013-04-01), 711-715 0361-5235 42:4<711 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer