naa a22 4500 510803989 CHVBK 20180411083408.0 cr unu---uuuuu 180411e20130401xx s 000 0 eng 10.1007/s11664-012-2467-x doi (NATIONALLICENCE)springer-10.1007/s11664-012-2467-x Effects of the Physical Properties of Bismate Frits on Contact Formation Between Ag Electrodes and Si Emitter in Si Solar Cells [Elektronische Daten] [Dongsun Kim, Chel-Jong Choi, Hyungsun Kim] To improve the performance of Si solar cells after firing, it is necessary to control the thickness of the glass layers between the Ag and Si, and the formation of Ag when it recrystallizes into the Si emitter, both of which decisively influence the performance of the cell. In this study, the effect of the physical properties of the frits on the contacts between Ag and Si is verified. Interfaces of Ag electrodes/glass layers/Ag recrystallized into n + emitter are formed when using high-fluidity frits. On the other hand, as the viscous flow of the frits slows as the temperature increases, an interface structure formed of Ag/thin glass/SiN x layers results, with the formation of Ag nanoprecipitates in the glass layers. Our results suggest that the viscous behavior of frits under increasing temperatures leads to the formation of distinct interfaces between Ag electrodes and Si. TMS, 2013 Interfaces nationallicence thermal properties nationallicence glass nationallicence Si3N4 nationallicence Kim Dongsun School of Materials Engineering, Inha University, 253 Younghyun-dong, 402-751, Incheon, South Korea aut Choi Chel-Jong School of Semiconductor and Chemical Engineering, Chonbuk National University, 561-756, Jeonju, South Korea aut Kim Hyungsun School of Materials Engineering, Inha University, 253 Younghyun-dong, 402-751, Incheon, South Korea aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/4(2013-04-01), 639-645 0361-5235 42:4<639 2013 42 11664 https://doi.org/10.1007/s11664-012-2467-x text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2467-x text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kim Dongsun School of Materials Engineering, Inha University, 253 Younghyun-dong, 402-751, Incheon, South Korea aut NATIONALLICENCE 700 1- Choi Chel-Jong School of Semiconductor and Chemical Engineering, Chonbuk National University, 561-756, Jeonju, South Korea aut NATIONALLICENCE 700 1- Kim Hyungsun School of Materials Engineering, Inha University, 253 Younghyun-dong, 402-751, Incheon, South Korea aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/4(2013-04-01), 639-645 0361-5235 42:4<639 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer