naa a22 4500 510804047 CHVBK 20180411083408.0 cr unu---uuuuu 180411e20130401xx s 000 0 eng 10.1007/s11664-012-2393-y doi (NATIONALLICENCE)springer-10.1007/s11664-012-2393-y Characterization of n -Type and p -Type ZnS Thin Layers Grown by an Electrochemical Method [Elektronische Daten] [O.K. Echendu, A.R. Weerasinghe, D.G. Diso, F. Fauzi, I.M. Dharmadasa] Electrodeposition of n-type and p-type thin-film layers of ZnS was carried out using a simple two-electrode system and aqueous solutions of ZnCl2 and (NH4)2S2O3 with different Zn2+ concentrations. X-ray diffraction measurements show that the ZnS layers deposited from both solutions are amorphous. Optical absorption measurements show low absorbance of the layers with energy bandgap in the range of 3.68eV to 3.78eV after postdeposition annealing. Photoelectrochemical cell measurements show that both n-type and p-type ZnS thin layers can be electrodeposited by simply changing the concentrations of the deposition solutions. With higher Zn2+ concentration in the bath, n-type ZnS films were deposited, while p-type ZnS films were deposited with lower Zn2+ concentration. The estimated resistivity of layers from both solutions using I-V measurements were 3.0×104Ωcm and 2.0×104Ωcm, respectively, for n-ZnS and p-ZnS. Scanning electron microscopy shows that the deposited films consist of particles with good surface coverage of the glass/fluorine-doped tin oxide substrate. TMS, 2013 Electrodeposition nationallicence n -type ZnS nationallicence p -type ZnS nationallicence thin films nationallicence semiconductors nationallicence Echendu O.K. Electronic Materials and Sensors Group, Materials and Engineering Research Institute, Sheffield Hallam University, S1 1WB, Sheffield, UK aut Weerasinghe A.R. Electronic Materials and Sensors Group, Materials and Engineering Research Institute, Sheffield Hallam University, S1 1WB, Sheffield, UK aut Diso D.G. Electronic Materials and Sensors Group, Materials and Engineering Research Institute, Sheffield Hallam University, S1 1WB, Sheffield, UK aut Fauzi F. Electronic Materials and Sensors Group, Materials and Engineering Research Institute, Sheffield Hallam University, S1 1WB, Sheffield, UK aut Dharmadasa I.M. Electronic Materials and Sensors Group, Materials and Engineering Research Institute, Sheffield Hallam University, S1 1WB, Sheffield, UK aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/4(2013-04-01), 692-700 0361-5235 42:4<692 2013 42 11664 https://doi.org/10.1007/s11664-012-2393-y text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2393-y text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Echendu O.K. Electronic Materials and Sensors Group, Materials and Engineering Research Institute, Sheffield Hallam University, S1 1WB, Sheffield, UK aut NATIONALLICENCE 700 1- Weerasinghe A.R. Electronic Materials and Sensors Group, Materials and Engineering Research Institute, Sheffield Hallam University, S1 1WB, Sheffield, UK aut NATIONALLICENCE 700 1- Diso D.G. Electronic Materials and Sensors Group, Materials and Engineering Research Institute, Sheffield Hallam University, S1 1WB, Sheffield, UK aut NATIONALLICENCE 700 1- Fauzi F. Electronic Materials and Sensors Group, Materials and Engineering Research Institute, Sheffield Hallam University, S1 1WB, Sheffield, UK aut NATIONALLICENCE 700 1- Dharmadasa I.M. Electronic Materials and Sensors Group, Materials and Engineering Research Institute, Sheffield Hallam University, S1 1WB, Sheffield, UK aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/4(2013-04-01), 692-700 0361-5235 42:4<692 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer