naa a22 4500 510804101 CHVBK 20180411083408.0 cr unu---uuuuu 180411e20130401xx s 000 0 eng 10.1007/s11664-012-2397-7 doi (NATIONALLICENCE)springer-10.1007/s11664-012-2397-7 Indirect Wafer Bonding and Epitaxial Transfer of GaSb-Based Materials [Elektronische Daten] [M. Grzesik, S. Vangala, W. Goodhue] Results from a study of indirect wafer bonding and epitaxial transfer of GaSb-based materials are presented. Benzocyclobutene (BCB) was used as a bonding agent to bond GaSb and epitaxial structures lattice matched to GaSb onto Si, GaAs, and sapphire carrier substrates. To better understand sources of stress during the bonding process, which can result in cracking and subsurface damage of the GaSb-based materials, BCB's hardness and reduced elastic modulus were measured at various stages during the curing process. Based on the results of curing experiments, a bonding and epitaxial transfer process for GaSb-based materials was then developed. Following bonding, using an experimentally determined low-stress cure cycle, GaSb substrates were removed from epitaxial layers of InAsSb using a combination of mechanical thinning and polishing followed by selective chemical etching using a hydrofluoric and chromic acid solution. Etch selectivity data are also presented where selectivity greater than 100:1 is achieved for GaSb:InAsSb. TMS, 2013 Wafer bonding nationallicence GaSb nationallicence BCB nationallicence InAsSb nationallicence selective etch nationallicence mechanical properties nationallicence Grzesik M. MIT Lincoln Laboratory, Lexington, MA, USA aut Vangala S. University of Massachusetts, Lowell, MA, USA aut Goodhue W. MIT Lincoln Laboratory, Lexington, MA, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/4(2013-04-01), 679-683 0361-5235 42:4<679 2013 42 11664 https://doi.org/10.1007/s11664-012-2397-7 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2397-7 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Grzesik M. MIT Lincoln Laboratory, Lexington, MA, USA aut NATIONALLICENCE 700 1- Vangala S. University of Massachusetts, Lowell, MA, USA aut NATIONALLICENCE 700 1- Goodhue W. MIT Lincoln Laboratory, Lexington, MA, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/4(2013-04-01), 679-683 0361-5235 42:4<679 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer