naa a22 4500 510804128 CHVBK 20180411083409.0 cr unu---uuuuu 180411e20130401xx s 000 0 eng 10.1007/s11664-012-2465-z doi (NATIONALLICENCE)springer-10.1007/s11664-012-2465-z Development of Electronic and Electrical Materials from Indian Ilmenite [Elektronische Daten] [R. Choudhury, Biswajit Pati, Piyush Das, R. Dash, Ankita Paul] Some new complex electronic materials have been prepared by mixing bismuth oxide (Bi2O3) and ilmenite in different proportions by weight, using a mixed-oxide technique. Room-temperature x-ray diffraction analysis confirms the formation of a new compound with trigonal (rhombohedral) crystal structure with some secondary phases. Studies of dielectric parameters (ε r and tanδ) of these compounds as a function of temperature at different frequencies show that they are almost temperature independent in the low-temperature range. They possess high dielectric constant and relatively small tangent loss even in the high-temperature range. Detailed studies of impedance and related parameters show that the electrical properties of these materials are strongly dependent on temperature, showing good correlation with their microstructures. The bulk resistance, evaluated from complex impedance spectra, is found to decrease with increasing temperature. Thus, these materials show negative temperature coefficient of resistance (NTCR)-type behavior similar to that of semiconductors. The same has also been observed from their I-V characteristics. Complex electric modulus analysis indicates the possibility of a hopping conduction mechanism in these systems with nonexponential-type conductivity relaxation. The nature of the variation of the direct-current (dc) conductivity with temperature confirms the Arrhenius behavior of these materials. The alternating-current (ac) conductivity spectra show a typical signature of an ionic conducting system, and are found to obey Jonscher's universal power law. TMS, 2013 Ilmenite nationallicence impedance analysis nationallicence bulk resistance nationallicence electric modulus analysis nationallicence Choudhury R. Department of Physics, Institute of Technical Education and Research, Bhubaneswar, Odisha, India aut Pati Biswajit Department of Physics, Institute of Technical Education and Research, Bhubaneswar, Odisha, India aut Das Piyush Department of Physics, Institute of Technical Education and Research, Bhubaneswar, Odisha, India aut Dash R. R & D Section, Gandhi Institute of Engineering and Technology, Gunupur, Odisha, India aut Paul Ankita Department of Physics, National Institute of Technology, Rourkela, India aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/4(2013-04-01), 769-782 0361-5235 42:4<769 2013 42 11664 https://doi.org/10.1007/s11664-012-2465-z text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2465-z text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Choudhury R. Department of Physics, Institute of Technical Education and Research, Bhubaneswar, Odisha, India aut NATIONALLICENCE 700 1- Pati Biswajit Department of Physics, Institute of Technical Education and Research, Bhubaneswar, Odisha, India aut NATIONALLICENCE 700 1- Das Piyush Department of Physics, Institute of Technical Education and Research, Bhubaneswar, Odisha, India aut NATIONALLICENCE 700 1- Dash R. R & D Section, Gandhi Institute of Engineering and Technology, Gunupur, Odisha, India aut NATIONALLICENCE 700 1- Paul Ankita Department of Physics, National Institute of Technology, Rourkela, India aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/4(2013-04-01), 769-782 0361-5235 42:4<769 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer