naa a22 4500 510804136 CHVBK 20180411083409.0 cr unu---uuuuu 180411e20130801xx s 000 0 eng 10.1007/s11664-013-2632-x doi (NATIONALLICENCE)springer-10.1007/s11664-013-2632-x Structural and Carrier Dynamics of GaN and AlGaN-Based Double Heterostructures in the UV Region [Elektronische Daten] [Ponnusamy Arivazhagan, Raju Ramesh, Mathaiyan Jayasakthi, Ravi Loganathan, Manavaimaran Balaji, Krishnan Baskar] Aluminum gallium nitride-based double heterostructures with two different active layer widths have been grown on GaN templates by metalorganic chemical vapor deposition. Crystalline quality has been investigated using high-resolution x-ray diffraction analysis, and screw, edge, as well as total dislocation densities in the GaN epilayer have been calculated. The dislocation density of GaN has been found to be on the order of 108cm−2. The nominal Al composition and in-plane strain ε xx for the AlGaN layer grown on the GaN layer have been measured by asymmetric reciprocal-space mapping. Surface properties and cross-sectional views of the samples have been analyzed using atomic force microscopy (AFM) and field-emission scanning electron microscopy (FESEM), respectively. Room-temperature time-resolved photoluminescence and photoluminescence measurements have been performed on Al0.18Ga0.82N/Al0.45Ga0.55N double heterostructures and the GaN template. The interface recombination velocity (S) of AlGaN-based double heterostructures has been calculated using carrier decay time measurement, increasing from 8.7×103cm/s to 13.4×103cm/s with varying active layer thickness. TMS, 2013 MOCVD nationallicence HRXRD nationallicence gallium nitride nationallicence aluminum gallium nitride nationallicence TRPL nationallicence Arivazhagan Ponnusamy Crystal Growth Centre, Anna University, 600025, Chennai, India aut Ramesh Raju Crystal Growth Centre, Anna University, 600025, Chennai, India aut Jayasakthi Mathaiyan Crystal Growth Centre, Anna University, 600025, Chennai, India aut Loganathan Ravi Crystal Growth Centre, Anna University, 600025, Chennai, India aut Balaji Manavaimaran Crystal Growth Centre, Anna University, 600025, Chennai, India aut Baskar Krishnan Crystal Growth Centre, Anna University, 600025, Chennai, India aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/8(2013-08-01), 2486-2491 0361-5235 42:8<2486 2013 42 11664 https://doi.org/10.1007/s11664-013-2632-x text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2632-x text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Arivazhagan Ponnusamy Crystal Growth Centre, Anna University, 600025, Chennai, India aut NATIONALLICENCE 700 1- Ramesh Raju Crystal Growth Centre, Anna University, 600025, Chennai, India aut NATIONALLICENCE 700 1- Jayasakthi Mathaiyan Crystal Growth Centre, Anna University, 600025, Chennai, India aut NATIONALLICENCE 700 1- Loganathan Ravi Crystal Growth Centre, Anna University, 600025, Chennai, India aut NATIONALLICENCE 700 1- Balaji Manavaimaran Crystal Growth Centre, Anna University, 600025, Chennai, India aut NATIONALLICENCE 700 1- Baskar Krishnan Crystal Growth Centre, Anna University, 600025, Chennai, India aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/8(2013-08-01), 2486-2491 0361-5235 42:8<2486 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer