naa a22 4500 510804152 CHVBK 20180411083409.0 cr unu---uuuuu 180411e20130801xx s 000 0 eng 10.1007/s11664-013-2600-5 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2600-5 Resistive Switching Properties of Sol-Gel-Derived V-Doped SrTiO3 Thin Films [Elektronische Daten] [Zhen Tang, Ying Xiong, Ding Xu, Ming Tang, Zi Wang, Yong Xiao, Bo Zeng, Xiao Gu, Jian Li, Long Wang] V-doped and undoped SrTiO3 (V:STO and STO) thin films on Pt/Ti/SiO2/Si substrates were synthesized using a sol-gel method to form metal-insulator-metal (MIM) structures. Coexistence of the bipolar and unipolar resistive switching (BRS and URS) modes in Pt/STO/Pt and Pt/V:STO/Pt structures was observed as a irreversible transition from BRS to URS on adjustment of the compliance current (I comp). Both states were stable and reproducible over 60 cycles, and the maximum operating voltage of the Pt/STO/Pt was reduced from 10V to 2V by doping with V. Linear fitting of current-voltage curves suggests that space-charge-limited leakage was the limiting leakage mechanism for these two devices. Based on these results, a switching mechanism based on filament theory is proposed to explain both resistive switching modes. TMS, 2013 Nonvolatile memory nationallicence RRAM nationallicence V-doped SrTiO3 thin films nationallicence resistive switching nationallicence Tang Zhen Key Laboratory of Low Dimensional Materials and Application Technology, Ministry of Education, Xiangtan University, 411105, Xiangtan, Hunan, China aut Xiong Ying The School of Mathematics and Computational Science, Xiangtan University, 411105, Xiangtan, Hunan, China aut Xu Ding Key Laboratory of Low Dimensional Materials and Application Technology, Ministry of Education, Xiangtan University, 411105, Xiangtan, Hunan, China aut Tang Ming Key Laboratory of Low Dimensional Materials and Application Technology, Ministry of Education, Xiangtan University, 411105, Xiangtan, Hunan, China aut Wang Zi Key Laboratory of Low Dimensional Materials and Application Technology, Ministry of Education, Xiangtan University, 411105, Xiangtan, Hunan, China aut Xiao Yong Key Laboratory of Low Dimensional Materials and Application Technology, Ministry of Education, Xiangtan University, 411105, Xiangtan, Hunan, China aut Zeng Bo Key Laboratory of Low Dimensional Materials and Application Technology, Ministry of Education, Xiangtan University, 411105, Xiangtan, Hunan, China aut Gu Xiao ASIC R&D Center, School of Electronic Science and Engineering of National University of Defense Technology, 410073, Changsha, Hunan, China aut Li Jian ASIC R&D Center, School of Electronic Science and Engineering of National University of Defense Technology, 410073, Changsha, Hunan, China aut Wang Long College of Electrical and Electronic Engineering, Wuhan Institute of Technology, 693 Xiongchu Avenue, 430073, Wuhan, China aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/8(2013-08-01), 2510-2515 0361-5235 42:8<2510 2013 42 11664 https://doi.org/10.1007/s11664-013-2600-5 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2600-5 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Tang Zhen Key Laboratory of Low Dimensional Materials and Application Technology, Ministry of Education, Xiangtan University, 411105, Xiangtan, Hunan, China aut NATIONALLICENCE 700 1- Xiong Ying The School of Mathematics and Computational Science, Xiangtan University, 411105, Xiangtan, Hunan, China aut NATIONALLICENCE 700 1- Xu Ding Key Laboratory of Low Dimensional Materials and Application Technology, Ministry of Education, Xiangtan University, 411105, Xiangtan, Hunan, China aut NATIONALLICENCE 700 1- Tang Ming Key Laboratory of Low Dimensional Materials and Application Technology, Ministry of Education, Xiangtan University, 411105, Xiangtan, Hunan, China aut NATIONALLICENCE 700 1- Wang Zi Key Laboratory of Low Dimensional Materials and Application Technology, Ministry of Education, Xiangtan University, 411105, Xiangtan, Hunan, China aut NATIONALLICENCE 700 1- Xiao Yong Key Laboratory of Low Dimensional Materials and Application Technology, Ministry of Education, Xiangtan University, 411105, Xiangtan, Hunan, China aut NATIONALLICENCE 700 1- Zeng Bo Key Laboratory of Low Dimensional Materials and Application Technology, Ministry of Education, Xiangtan University, 411105, Xiangtan, Hunan, China aut NATIONALLICENCE 700 1- Gu Xiao ASIC R&D Center, School of Electronic Science and Engineering of National University of Defense Technology, 410073, Changsha, Hunan, China aut NATIONALLICENCE 700 1- Li Jian ASIC R&D Center, School of Electronic Science and Engineering of National University of Defense Technology, 410073, Changsha, Hunan, China aut NATIONALLICENCE 700 1- Wang Long College of Electrical and Electronic Engineering, Wuhan Institute of Technology, 693 Xiongchu Avenue, 430073, Wuhan, China aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/8(2013-08-01), 2510-2515 0361-5235 42:8<2510 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer