naa a22 4500 510804160 CHVBK 20180411083409.0 cr unu---uuuuu 180411e20130801xx s 000 0 eng 10.1007/s11664-013-2616-x doi (NATIONALLICENCE)springer-10.1007/s11664-013-2616-x Investigation of Characteristics of Al2O3/ n -In x Ga1− x As ( x =0.53, 0.7, and 1) Metal-Oxide-Semiconductor Structures [Elektronische Daten] [Hai-Dang Trinh, Yueh-Chin Lin, Chien-I Kuo, Edward Chang, Hong-Quan Nguyen, Yuen-Yee Wong, Chih-Chieh Yu, Chi-Ming Chen, Chia-Yuan Chang, Jyun-Yi Wu, Han-Chin Chiu, Terrence Yu, Hui-Cheng Chang, Joseph Tsai, David Hwang] The electrical properties of Al2O3/n-InGaAs metal-oxide-semiconductor capacitors (MOSCAPs) with In content of 0.53, 0.7, and 1 (InAs) have been investigated. Results show small capacitance-voltage (C-V) frequency dispersion in accumulation (1.70% to 1.85% per decade) for these MOSCAPs, mostly being assigned to border traps in Al2O3. With higher In content, shorter minority-carrier response time and smaller C-V hysteresis are observed. The reduction of C-V hysteresis might be related to the reduction of Ga-bearing oxides in Al2O3/InGaAs interfaces as indicated by x-ray photoelectron spectroscopy. TMS, 2013 ALD Al2O3 nationallicence surface treatment nationallicence InGaAs nationallicence InAs nationallicence MOSCAPs nationallicence Trinh Hai-Dang Department of Materials Science and Engineering, National Chiao Tung University, 30010, Hsinchu, Taiwan aut Lin Yueh-Chin Department of Materials Science and Engineering, National Chiao Tung University, 30010, Hsinchu, Taiwan aut Kuo Chien-I Department of Materials Science and Engineering, National Chiao Tung University, 30010, Hsinchu, Taiwan aut Chang Edward Department of Materials Science and Engineering, National Chiao Tung University, 30010, Hsinchu, Taiwan aut Nguyen Hong-Quan Department of Materials Science and Engineering, National Chiao Tung University, 30010, Hsinchu, Taiwan aut Wong Yuen-Yee Department of Materials Science and Engineering, National Chiao Tung University, 30010, Hsinchu, Taiwan aut Yu Chih-Chieh Instrument Technology Research Center, 30010, Hsinchu, Taiwan aut Chen Chi-Ming Taiwan Semiconductor Manufacturing Company Limited, Hsinchu Science Park, 30010, Hsinchu, Taiwan aut Chang Chia-Yuan Taiwan Semiconductor Manufacturing Company Limited, Hsinchu Science Park, 30010, Hsinchu, Taiwan aut Wu Jyun-Yi Taiwan Semiconductor Manufacturing Company Limited, Hsinchu Science Park, 30010, Hsinchu, Taiwan aut Chiu Han-Chin Taiwan Semiconductor Manufacturing Company Limited, Hsinchu Science Park, 30010, Hsinchu, Taiwan aut Yu Terrence Taiwan Semiconductor Manufacturing Company Limited, Hsinchu Science Park, 30010, Hsinchu, Taiwan aut Chang Hui-Cheng Taiwan Semiconductor Manufacturing Company Limited, Hsinchu Science Park, 30010, Hsinchu, Taiwan aut Tsai Joseph Taiwan Semiconductor Manufacturing Company Limited, Hsinchu Science Park, 30010, Hsinchu, Taiwan aut Hwang David Taiwan Semiconductor Manufacturing Company Limited, Hsinchu Science Park, 30010, Hsinchu, Taiwan aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/8(2013-08-01), 2439-2444 0361-5235 42:8<2439 2013 42 11664 https://doi.org/10.1007/s11664-013-2616-x text/html Onlinezugriff via DOI 1 brief-communication jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2616-x text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Trinh Hai-Dang Department of Materials Science and Engineering, National Chiao Tung University, 30010, Hsinchu, Taiwan aut NATIONALLICENCE 700 1- Lin Yueh-Chin Department of Materials Science and Engineering, National Chiao Tung University, 30010, Hsinchu, Taiwan aut NATIONALLICENCE 700 1- Kuo Chien-I Department of Materials Science and Engineering, National Chiao Tung University, 30010, Hsinchu, Taiwan aut NATIONALLICENCE 700 1- Chang Edward Department of Materials Science and Engineering, National Chiao Tung University, 30010, Hsinchu, Taiwan aut NATIONALLICENCE 700 1- Nguyen Hong-Quan Department of Materials Science and Engineering, National Chiao Tung University, 30010, Hsinchu, Taiwan aut NATIONALLICENCE 700 1- Wong Yuen-Yee Department of Materials Science and Engineering, National Chiao Tung University, 30010, Hsinchu, Taiwan aut NATIONALLICENCE 700 1- Yu Chih-Chieh Instrument Technology Research Center, 30010, Hsinchu, Taiwan aut NATIONALLICENCE 700 1- Chen Chi-Ming Taiwan Semiconductor Manufacturing Company Limited, Hsinchu Science Park, 30010, Hsinchu, Taiwan aut NATIONALLICENCE 700 1- Chang Chia-Yuan Taiwan Semiconductor Manufacturing Company Limited, Hsinchu Science Park, 30010, Hsinchu, Taiwan aut NATIONALLICENCE 700 1- Wu Jyun-Yi Taiwan Semiconductor Manufacturing Company Limited, Hsinchu Science Park, 30010, Hsinchu, Taiwan aut NATIONALLICENCE 700 1- Chiu Han-Chin Taiwan Semiconductor Manufacturing Company Limited, Hsinchu Science Park, 30010, Hsinchu, Taiwan aut NATIONALLICENCE 700 1- Yu Terrence Taiwan Semiconductor Manufacturing Company Limited, Hsinchu Science Park, 30010, Hsinchu, Taiwan aut NATIONALLICENCE 700 1- Chang Hui-Cheng Taiwan Semiconductor Manufacturing Company Limited, Hsinchu Science Park, 30010, Hsinchu, Taiwan aut NATIONALLICENCE 700 1- Tsai Joseph Taiwan Semiconductor Manufacturing Company Limited, Hsinchu Science Park, 30010, Hsinchu, Taiwan aut NATIONALLICENCE 700 1- Hwang David Taiwan Semiconductor Manufacturing Company Limited, Hsinchu Science Park, 30010, Hsinchu, Taiwan aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/8(2013-08-01), 2439-2444 0361-5235 42:8<2439 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer