naa a22 4500 510804179 CHVBK 20180411083409.0 cr unu---uuuuu 180411e20130801xx s 000 0 eng 10.1007/s11664-013-2608-x doi (NATIONALLICENCE)springer-10.1007/s11664-013-2608-x Improvement of the Crystallinity of Silicon Films Deposited by Hot-Wire Chemical Vapor Deposition with Negative Substrate Bias [Elektronische Daten] [Lei Zhang, Honglie Shen, Jiayi You] We have investigated the effect of negative substrate bias on microcrystalline silicon films deposited on glass and stainless steel by hot-wire chemical vapor deposition (HWCVD) to gain insight into the effect of negative substrate bias on crystallization. Structural characterization of the silicon films was performed by Raman spectroscopy, x-ray diffraction, and scanning electron microscopy. It was found that the crystallinity of the films is obviously improved by applying the substrate bias, especially for films on stainless steel. At hot-wire temperature of 1800°C and negative substrate bias of −800V, grain size as large as 200nm was obtained on stainless-steel substrate with crystalline fraction 9% higher than that of films deposited on glass and 15% higher than that of films deposited without substrate bias. It is deduced that the improvement of the crystallinity is mainly related to the accelerated electrons emitted from the hot wires. The differences in this improvement between different substrates are caused by the different electrical potential of the substrates. A solar cell fabricated by HWCVD with −800V substrate bias is demonstrated, showing an obviously higher conversion efficiency than that without substrate bias. TMS, 2013 Microcrystalline silicon film nationallicence crystallinity nationallicence negative substrate bias nationallicence hot-wire chemical vapor deposition nationallicence solar cells nationallicence Zhang Lei College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, 29 Yudao Street, 210016, Nanjing, China aut Shen Honglie College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, 29 Yudao Street, 210016, Nanjing, China aut You Jiayi College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, 29 Yudao Street, 210016, Nanjing, China aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/8(2013-08-01), 2464-2469 0361-5235 42:8<2464 2013 42 11664 https://doi.org/10.1007/s11664-013-2608-x text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2608-x text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Zhang Lei College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, 29 Yudao Street, 210016, Nanjing, China aut NATIONALLICENCE 700 1- Shen Honglie College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, 29 Yudao Street, 210016, Nanjing, China aut NATIONALLICENCE 700 1- You Jiayi College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, 29 Yudao Street, 210016, Nanjing, China aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/8(2013-08-01), 2464-2469 0361-5235 42:8<2464 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer