naa a22 4500 510804233 CHVBK 20180411083409.0 cr unu---uuuuu 180411e20130801xx s 000 0 eng 10.1007/s11664-013-2618-8 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2618-8 Improvement in the Bias Stability of Zinc-Tin OxideThin-Film Transistors by Hafnium Doping [Elektronische Daten] [Dong-Suk Han, Jae-Hyung Park, Yu-Jin Kang, Jong-Wan Park] The influence of hafnium (Hf) doping on negative-bias temperature instability in zinc-tin oxide thin-film transistors was studied. Hafnium-zinc-tin oxide TFTs exhibited a turn-on voltage (V ON) that shifted from 0V to −1V with negligible changes in the subthreshold swing and field-effect mobility after 3h of total stresses. The enhanced improvement of the V ON shift (ΔV ON) was attributed to the reduction in the interface trap density, which may result from the suppression of oxygen-vacancy-related defects by the Hf ions. TMS, 2013 Amorphous oxide semiconductor nationallicence hafnium-zinc-tin oxide nationallicence ZnO-based TFT nationallicence negative-bias temperature instability (NBTI) nationallicence Han Dong-Suk Department of Nanoscale Semiconductor Engineering, Hanyang University, 17 Haengdang-dong, Seoungdong-ku, 133-791, Seoul, South Korea aut Park Jae-Hyung Department of Nanoscale Semiconductor Engineering, Hanyang University, 17 Haengdang-dong, Seoungdong-ku, 133-791, Seoul, South Korea aut Kang Yu-Jin Department of Nanoscale Semiconductor Engineering, Hanyang University, 17 Haengdang-dong, Seoungdong-ku, 133-791, Seoul, South Korea aut Park Jong-Wan Department of Materials Science and Engineering, Hanyang University, 17 Haengdang-dong, Seoungdong-ku, 133-791, Seoul, South Korea aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/8(2013-08-01), 2470-2477 0361-5235 42:8<2470 2013 42 11664 https://doi.org/10.1007/s11664-013-2618-8 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2618-8 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Han Dong-Suk Department of Nanoscale Semiconductor Engineering, Hanyang University, 17 Haengdang-dong, Seoungdong-ku, 133-791, Seoul, South Korea aut NATIONALLICENCE 700 1- Park Jae-Hyung Department of Nanoscale Semiconductor Engineering, Hanyang University, 17 Haengdang-dong, Seoungdong-ku, 133-791, Seoul, South Korea aut NATIONALLICENCE 700 1- Kang Yu-Jin Department of Nanoscale Semiconductor Engineering, Hanyang University, 17 Haengdang-dong, Seoungdong-ku, 133-791, Seoul, South Korea aut NATIONALLICENCE 700 1- Park Jong-Wan Department of Materials Science and Engineering, Hanyang University, 17 Haengdang-dong, Seoungdong-ku, 133-791, Seoul, South Korea aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/8(2013-08-01), 2470-2477 0361-5235 42:8<2470 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer