naa a22 4500 510804241 CHVBK 20180411083409.0 cr unu---uuuuu 180411e20130801xx s 000 0 eng 10.1007/s11664-013-2611-2 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2611-2 Influence of Interference on Extraction Efficiency of Ultraviolet Vertical Light-Emitting Diodes [Elektronische Daten] [Seung Kim, Young Song, Seong Jeon, Gye Yang, Jun Ha, Sang Lee, Jong Baek, Hyung Park] We report on enhanced efficiency of ultraviolet vertical light-emitting diodes (VLEDs) with interference between the reflective mirror and the multiple quantum well. The dimensions of the cavity are fixed at 30nm for the p-AlGaN layer, while various thicknesses of p-GaN from 60nm to 140nm were used. The light output power of the VLED in constructive compared with destructive interference condition increased by 23.9% at 350mA. These improvements could be attributed to the predominant constructive interference of vertical radiation due to an optical cavity with optimal p-GaN thickness. TMS, 2013 Vertical light-emitting diodes nationallicence extraction efficiency nationallicence interference nationallicence three-dimensional finite-difference time-domain (3D-FDTD) nationallicence Kim Seung LED Research & Business Division, Korea Photonics Technology Institute, 500-779, Gwangju, Korea aut Song Young LED Research & Business Division, Korea Photonics Technology Institute, 500-779, Gwangju, Korea aut Jeon Seong LED Research & Business Division, Korea Photonics Technology Institute, 500-779, Gwangju, Korea aut Yang Gye School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, 561-756, Jeonju, Korea aut Ha Jun Department of Advanced Chemical and Engineering, Chonnam National University, 500-757, Gwangju, Korea aut Lee Sang LED Research & Business Division, Korea Photonics Technology Institute, 500-779, Gwangju, Korea aut Baek Jong LED Research & Business Division, Korea Photonics Technology Institute, 500-779, Gwangju, Korea aut Park Hyung LED Research & Business Division, Korea Photonics Technology Institute, 500-779, Gwangju, Korea aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/8(2013-08-01), 2435-2438 0361-5235 42:8<2435 2013 42 11664 https://doi.org/10.1007/s11664-013-2611-2 text/html Onlinezugriff via DOI 1 brief-communication jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2611-2 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kim Seung LED Research & Business Division, Korea Photonics Technology Institute, 500-779, Gwangju, Korea aut NATIONALLICENCE 700 1- Song Young LED Research & Business Division, Korea Photonics Technology Institute, 500-779, Gwangju, Korea aut NATIONALLICENCE 700 1- Jeon Seong LED Research & Business Division, Korea Photonics Technology Institute, 500-779, Gwangju, Korea aut NATIONALLICENCE 700 1- Yang Gye School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, 561-756, Jeonju, Korea aut NATIONALLICENCE 700 1- Ha Jun Department of Advanced Chemical and Engineering, Chonnam National University, 500-757, Gwangju, Korea aut NATIONALLICENCE 700 1- Lee Sang LED Research & Business Division, Korea Photonics Technology Institute, 500-779, Gwangju, Korea aut NATIONALLICENCE 700 1- Baek Jong LED Research & Business Division, Korea Photonics Technology Institute, 500-779, Gwangju, Korea aut NATIONALLICENCE 700 1- Park Hyung LED Research & Business Division, Korea Photonics Technology Institute, 500-779, Gwangju, Korea aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/8(2013-08-01), 2435-2438 0361-5235 42:8<2435 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer