naa a22 4500 510804381 CHVBK 20180411083410.0 cr unu---uuuuu 180411e20130801xx s 000 0 eng 10.1007/s11664-013-2631-y doi (NATIONALLICENCE)springer-10.1007/s11664-013-2631-y Thermoelectric Properties of Y1− x Ag x BaCo4O7+ δ Ceramics [Elektronische Daten] [Q. He, J. Zhang, F. Gao, F. Wu, X. Hu, H. Song] The thermoelectric properties of the Ag-doped ceramics Y1−x Ag x BaCo4O7+δ (x=0.0, 0.05, 0.1, 0.15, and 0.2) were investigated from 373K to 973K. The results show that the doping of Ag can reduce the electrical resistivity. The Seebeck coefficients of the samples decrease when the Ag doping amount is small, but increase when the Ag doping amount is large. The activation energy of the electrical conductivity was calculated using Arrhenius plots, and it was found that the activation energy descends with increase of the Ag doping amount. According to the power factors, the optimum Ag doping amount is x=0.15, which results in a higher power factor of 81μWm−1K−2 at 973K, 72.7% higher than for the sample without Ag doping. TMS, 2013 Thermoelectric materials nationallicence element doping nationallicence Y1− x Ag x BaCo4O7+ δ nationallicence He Q. Key Laboratory of Material Physics of Ministry of Education, and Physical Engineering College, Zhengzhou University, 450052, Zhengzhou, China aut Zhang J. College of Mathematics and Information Science, North China University of Water Conservancy and Electric Power, 450011, Zhengzhou, China aut Gao F. Key Laboratory of Material Physics of Ministry of Education, and Physical Engineering College, Zhengzhou University, 450052, Zhengzhou, China aut Wu F. Key Laboratory of Material Physics of Ministry of Education, and Physical Engineering College, Zhengzhou University, 450052, Zhengzhou, China aut Hu X. Key Laboratory of Material Physics of Ministry of Education, and Physical Engineering College, Zhengzhou University, 450052, Zhengzhou, China aut Song H. Key Laboratory of Material Physics of Ministry of Education, and Physical Engineering College, Zhengzhou University, 450052, Zhengzhou, China aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/8(2013-08-01), 2570-2573 0361-5235 42:8<2570 2013 42 11664 https://doi.org/10.1007/s11664-013-2631-y text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2631-y text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- He Q. Key Laboratory of Material Physics of Ministry of Education, and Physical Engineering College, Zhengzhou University, 450052, Zhengzhou, China aut NATIONALLICENCE 700 1- Zhang J. College of Mathematics and Information Science, North China University of Water Conservancy and Electric Power, 450011, Zhengzhou, China aut NATIONALLICENCE 700 1- Gao F. Key Laboratory of Material Physics of Ministry of Education, and Physical Engineering College, Zhengzhou University, 450052, Zhengzhou, China aut NATIONALLICENCE 700 1- Wu F. Key Laboratory of Material Physics of Ministry of Education, and Physical Engineering College, Zhengzhou University, 450052, Zhengzhou, China aut NATIONALLICENCE 700 1- Hu X. Key Laboratory of Material Physics of Ministry of Education, and Physical Engineering College, Zhengzhou University, 450052, Zhengzhou, China aut NATIONALLICENCE 700 1- Song H. Key Laboratory of Material Physics of Ministry of Education, and Physical Engineering College, Zhengzhou University, 450052, Zhengzhou, China aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/8(2013-08-01), 2570-2573 0361-5235 42:8<2570 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer