naa a22 4500 510804403 CHVBK 20180411083410.0 cr unu---uuuuu 180411e20130801xx s 000 0 eng 10.1007/s11664-013-2630-z doi (NATIONALLICENCE)springer-10.1007/s11664-013-2630-z Comparison of Phase Shifting Techniques for Measuring In-Plane Residual Stress in Thin, Flat Silicon Wafers [Elektronische Daten] [R. Prasath, K. Skenes, S. Danyluk] This paper reports on a comparison of the six- and ten-step phase shifting methods in digital transmission photoelasticity and the application of these methods to obtain the residual stresses in thin (200μm), flat crystalline silicon wafers (156mm square). The ten-step phase shifting technique is judged to be superior with reduced noise in the isoclinics and a resulting higher accuracy when dealing with the near-zero retardation prevalent in residual stress measurements of silicon wafers. TMS, 2013 Residual stress nationallicence silicon wafers nationallicence photovoltaics nationallicence NIR polariscope nationallicence phase shifting nationallicence Prasath R. The George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, 30332, Atlanta, GA, USA aut Skenes K. The George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, 30332, Atlanta, GA, USA aut Danyluk S. The George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, 30332, Atlanta, GA, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/8(2013-08-01), 2478-2485 0361-5235 42:8<2478 2013 42 11664 https://doi.org/10.1007/s11664-013-2630-z text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2630-z text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Prasath R. The George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, 30332, Atlanta, GA, USA aut NATIONALLICENCE 700 1- Skenes K. The George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, 30332, Atlanta, GA, USA aut NATIONALLICENCE 700 1- Danyluk S. The George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, 30332, Atlanta, GA, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/8(2013-08-01), 2478-2485 0361-5235 42:8<2478 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer