naa a22 4500 510804446 CHVBK 20180411083410.0 cr unu---uuuuu 180411e20130801xx s 000 0 eng 10.1007/s11664-013-2589-9 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2589-9 Effects of Growth Temperature and Annealing on Propertiesof Zn3Sn2O7 Thin Films and Application in TFTs [Elektronische Daten] [Yong-Yue Chen, Xi-Kun Cai, Zhen-Yu Ye, Xiong Wang, Bing-Po Zhang, Hui-Zhen Wu] The effects of growth temperature and annealing on the physical properties of Zn3Sn2O7 thin films were investigated in this work. The Zn3Sn2O7 thin films were deposited on glass substrates by radio frequency (rf) magnetron sputtering. It is found that the films are amorphous regardless of the growth temperature. The film grown at room temperature shows the highest mobility of 8.1cm2V−1s−1 and the lowest carrier concentration of 2.0×1015cm−3. The highest carrier concentration of 1.6×1019cm−3 is obtained at the growth temperature of 250°C. Annealing treatment of the Zn3Sn2O7 thin films resulted in increases of carrier concentration and mobility. The average transmittance of the as-deposited and annealed films reaches 80%. By using a Zn3Sn2O7 thin film as the channel and a Ta2O5 thin film as the insulating layer, we fabricated transparent Zn3Sn2O7 thin-film transistors with field-effect mobility of 21.2cm2V−1s−1, on/off current ratio of 105, threshold voltage of 0.8V, and subthreshold swing of 0.8V/decade. TMS, 2013 XRD nationallicence electrical properties nationallicence optical properties nationallicence annealing nationallicence thin-film transistor (TFT) nationallicence Chen Yong-Yue Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, 310027, Hangzhou, People's Republic of China aut Cai Xi-Kun Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, 310027, Hangzhou, People's Republic of China aut Ye Zhen-Yu Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, 310027, Hangzhou, People's Republic of China aut Wang Xiong Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, 310027, Hangzhou, People's Republic of China aut Zhang Bing-Po Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, 310027, Hangzhou, People's Republic of China aut Wu Hui-Zhen Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, 310027, Hangzhou, People's Republic of China aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/8(2013-08-01), 2459-2463 0361-5235 42:8<2459 2013 42 11664 https://doi.org/10.1007/s11664-013-2589-9 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2589-9 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Chen Yong-Yue Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, 310027, Hangzhou, People's Republic of China aut NATIONALLICENCE 700 1- Cai Xi-Kun Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, 310027, Hangzhou, People's Republic of China aut NATIONALLICENCE 700 1- Ye Zhen-Yu Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, 310027, Hangzhou, People's Republic of China aut NATIONALLICENCE 700 1- Wang Xiong Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, 310027, Hangzhou, People's Republic of China aut NATIONALLICENCE 700 1- Zhang Bing-Po Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, 310027, Hangzhou, People's Republic of China aut NATIONALLICENCE 700 1- Wu Hui-Zhen Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, 310027, Hangzhou, People's Republic of China aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/8(2013-08-01), 2459-2463 0361-5235 42:8<2459 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer