naa a22 4500 510804454 CHVBK 20180411083410.0 cr unu---uuuuu 180411e20130801xx s 000 0 eng 10.1007/s11664-013-2627-7 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2627-7 PIN-PMN-PT Single-Crystal-Based 1-3 Piezoelectric Composites for Ultrasonic Transducer Applications [Elektronische Daten] [Lili Li, Zhuo Xu, Song Xia, Zhengrong Li, Xuanrong Ji, Shaojun Long] In this work, Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) single crystal/epoxy 1-3 composites with different thicknesses (400μm to 825μm) were fabricated using the conventional dice-and-fill method. Their properties were compared with the corresponding lead zirconate titanate (PZT) ceramic 1-3 composites. Excellent properties for ultrasonic transducer applications have been achieved, such as high electromechanical coupling coefficient (k t≈78% to 83%), high piezoelectric strain coefficient (d 33≈1000pm/V), and lower acoustic impedance (Z≈20Mrayl). The strain levels of PIN-PMN-PT composites were almost constant (1000pm/V) with decreasing thickness, being much higher than those of PZT composites (650pm/V). However, an increase in strain hysteresis was observed with decreasing thickness, reaching 25.3% for the 400-μm single-crystal 1-3 composite, which is lower than the corresponding PZT composites (44.1% for 350-μm PZT ceramic 1-3 composite). These results show that PIN-PMN-PT single-crystal 1-3 composites have great potential for use in advanced ultrasound transducer applications. TMS, 2013 Single crystal nationallicence 1-3 composites nationallicence piezoelectric nationallicence Li Lili Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, 710049, Xi'an, People's Republic of China aut Xu Zhuo Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, 710049, Xi'an, People's Republic of China aut Xia Song Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, 710049, Xi'an, People's Republic of China aut Li Zhengrong Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, 710049, Xi'an, People's Republic of China aut Ji Xuanrong Guangzhou Doppler Electronic Technologies Co., Yushu Industrial Garden, Science Center, 510663, Guangzhou, People's Republic of China aut Long Shaojun Guangzhou Doppler Electronic Technologies Co., Yushu Industrial Garden, Science Center, 510663, Guangzhou, People's Republic of China aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/8(2013-08-01), 2564-2569 0361-5235 42:8<2564 2013 42 11664 https://doi.org/10.1007/s11664-013-2627-7 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2627-7 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Li Lili Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, 710049, Xi'an, People's Republic of China aut NATIONALLICENCE 700 1- Xu Zhuo Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, 710049, Xi'an, People's Republic of China aut NATIONALLICENCE 700 1- Xia Song Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, 710049, Xi'an, People's Republic of China aut NATIONALLICENCE 700 1- Li Zhengrong Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, 710049, Xi'an, People's Republic of China aut NATIONALLICENCE 700 1- Ji Xuanrong Guangzhou Doppler Electronic Technologies Co., Yushu Industrial Garden, Science Center, 510663, Guangzhou, People's Republic of China aut NATIONALLICENCE 700 1- Long Shaojun Guangzhou Doppler Electronic Technologies Co., Yushu Industrial Garden, Science Center, 510663, Guangzhou, People's Republic of China aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/8(2013-08-01), 2564-2569 0361-5235 42:8<2564 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer