naa a22 4500 510804489 CHVBK 20180411083410.0 cr unu---uuuuu 180411e20130801xx s 000 0 eng 10.1007/s11664-013-2601-4 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2601-4 A Feature-Scale Greenwood-Williamson Model for Metal Chemical Mechanical Planarization [Elektronische Daten] [Qinzhi Xu, Lan Chen] In this work, a new feature-scale model is proposed for investigating the interaction between the wafer pattern and individual pad asperities in the process of chemical mechanical planarization (CMP). Based on the contact mechanics equation and the modified Greenwood-Williamson (GW) model which captures the evolution of feature curvature and the modification of the pad asperity height distribution, the discrete convolution and fast Fourier transform (DC-FFT) technique is adopted and combined with the Picard iteration method to calculate the direct contact pressure distribution between the wafer surface and the polishing pad. The computed pressure is then used to determine the local removal rate of the underlying patterns and predict the evolution of the wafer surface profile. Furthermore, the method is extended to capture the metal dishing as the feature size changes. It is shown that the present model can avoid the false simulated results produced by directly applying the original GW model for CMP when the feature size approaches zero. Otherwise, the calculated surface profile and dishing values of pattern geometries are in good agreement with the experimental data. Therefore, this model can not only be used to simulate the evolution of the wafer surface for global planarization at lower technology nodes, but can also be applied to provide some basic design rules for improving the process parameters and reducing the time and cost for developing new architectures. TMS, 2013 Feature-scale model nationallicence chemical mechanical planarization nationallicence fast Fourier transform nationallicence surface profile nationallicence dishing nationallicence Xu Qinzhi Institute of Microelectronics, Chinese Academy of Sciences, Chaoyang District, 100029, Beijing, People's Republic of China aut Chen Lan Institute of Microelectronics, Chinese Academy of Sciences, Chaoyang District, 100029, Beijing, People's Republic of China aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/8(2013-08-01), 2630-2640 0361-5235 42:8<2630 2013 42 11664 https://doi.org/10.1007/s11664-013-2601-4 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2601-4 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Xu Qinzhi Institute of Microelectronics, Chinese Academy of Sciences, Chaoyang District, 100029, Beijing, People's Republic of China aut NATIONALLICENCE 700 1- Chen Lan Institute of Microelectronics, Chinese Academy of Sciences, Chaoyang District, 100029, Beijing, People's Republic of China aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/8(2013-08-01), 2630-2640 0361-5235 42:8<2630 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer