naa a22 4500 510804500 CHVBK 20180411083410.0 cr unu---uuuuu 180411e20130801xx s 000 0 eng 10.1007/s11664-013-2595-y doi (NATIONALLICENCE)springer-10.1007/s11664-013-2595-y Dynamical X-ray Diffraction from In x Ga1− x As Heterostructures with Dislocations [Elektronische Daten] [P. Rago, J. Ayers] High-resolution x-ray diffraction is an important nondestructive tool for structural characterization of semiconductor heterostructures, and the diffraction intensity profiles contain information on the depth profiles of strain, composition, and defect densities in device heterostructures. Much of this information remains inaccessible because the lack of phase information prevents direct inversion of the rocking curves. The current practice is to use dynamical simulations in conjunction with a curve-fitting procedure to indirectly extract the profiles of strain and composition, but such dynamical simulations have been based on perfect, dislocation-free laminar crystals, which renders the analysis inapplicable to highly mismatched structures containing dislocation densities greater than about 106cm−2. In this work we present a dynamical model for Bragg x-ray diffraction in semiconductor device structures with nonuniform composition, strain, and dislocation density, which is based on the Takagi-Taupin equation for distorted crystals and accounts for the diffuse scattering arising from the strain mosaicity and angular mosaicity associated with dislocations. We show theoretically that the x-ray diffraction profiles from In x Ga1−x As/GaAs (001) heterostructures are strongly affected by the depth distribution of the dislocation density as well as the composition and strain, so that in principle all three distributions may be obtained by the analysis of the measured diffraction profiles. TMS, 2013 X-ray diffraction nationallicence metamorphic heterostructures nationallicence InGaAs nationallicence dislocations nationallicence dynamical diffraction nationallicence Rago P. Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Way, Unit 2157, 06269-2157, Storrs, CT, USA aut Ayers J. Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Way, Unit 2157, 06269-2157, Storrs, CT, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/8(2013-08-01), 2450-2458 0361-5235 42:8<2450 2013 42 11664 https://doi.org/10.1007/s11664-013-2595-y text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2595-y text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Rago P. Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Way, Unit 2157, 06269-2157, Storrs, CT, USA aut NATIONALLICENCE 700 1- Ayers J. Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Way, Unit 2157, 06269-2157, Storrs, CT, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/8(2013-08-01), 2450-2458 0361-5235 42:8<2450 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer