naa a22 4500 510804543 CHVBK 20180411083410.0 cr unu---uuuuu 180411e20130501xx s 000 0 eng 10.1007/s11664-012-2326-9 doi (NATIONALLICENCE)springer-10.1007/s11664-012-2326-9 Vanadium Oxide Thin Films Alloyed with Ti, Zr, Nb, and Mo for Uncooled Infrared Imaging Applications [Elektronische Daten] [Adem Ozcelik, Orlando Cabarcos, David Allara, Mark Horn] Microbolometer-grade vanadium oxide (VO x ) thin films with 1.3<x<2.0 were prepared by pulsed direct-current (DC) sputtering using substrate bias in a controlled oxygen and argon environment. These films were systematically alloyed with Ti, Nb, Mo, and Zr using a second gun and radiofrequency (RF) reactive co-sputtering to probe the effects of the transition metals on the film charge transport characteristics. The results reveal that the temperature coefficient of resistance (TCR) and resistivity are unexpectedly similar for alloyed and unalloyed films up to alloy compositions in the ∼20at.% range. Analysis of the film structures for the case of the 17% Nb-alloyed film by glancing-angle x-ray diffraction and transmission electron microscopy shows that the microstructure remains even with the addition of high concentrations of alloy metal, demonstrating the robust character of the VO x films to maintain favorable electrical transport properties for bolometer applications. Postdeposition thermal annealing of the alloyed VO x films further reveals improvement of electrical properties compared with unalloyed films, indicating a direction for further improvements in the materials. TMS, 2012 Vanadium oxide thin films nationallicence microbolometers nationallicence sputtering nationallicence temperature coefficient of resistance nationallicence uncooled infrared imaging nationallicence microstructure nationallicence Ozcelik Adem Materials Science and Engineering Department, Penn State University, 16802, University Park, PA, USA aut Cabarcos Orlando Chemistry Department, Penn State University, 16802, University Park, PA, USA aut Allara David Materials Science and Engineering Department, Penn State University, 16802, University Park, PA, USA aut Horn Mark Engineering Science and Mechanics Department, Penn State University, 16802, University Park, PA, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/5(2013-05-01), 901-905 0361-5235 42:5<901 2013 42 11664 https://doi.org/10.1007/s11664-012-2326-9 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2326-9 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Ozcelik Adem Materials Science and Engineering Department, Penn State University, 16802, University Park, PA, USA aut NATIONALLICENCE 700 1- Cabarcos Orlando Chemistry Department, Penn State University, 16802, University Park, PA, USA aut NATIONALLICENCE 700 1- Allara David Materials Science and Engineering Department, Penn State University, 16802, University Park, PA, USA aut NATIONALLICENCE 700 1- Horn Mark Engineering Science and Mechanics Department, Penn State University, 16802, University Park, PA, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/5(2013-05-01), 901-905 0361-5235 42:5<901 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer