naa a22 4500 510804551 CHVBK 20180411083410.0 cr unu---uuuuu 180411e20130501xx s 000 0 eng 10.1007/s11664-013-2558-3 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2558-3 Growth and Characterization of In x Ga1− x N Multiple Quantum Wells Without Phase Separation [Elektronische Daten] [P. Wadekar, Q. Chen, H. Huang, Y. Lin, C. Chang, H. Seo, T. Dung, M. Chou, S. Feng, N. Ho, D. Wijesundera, W. Chu, L. Tu] Efficient conversion of photon energy into electricity is a crucial step toward a sustainable solar-energy economy. Likewise, solid-state lighting devices are gaining prominence because of benefits such as reduced energy consumption and reduced toxicity. Among the various semiconductors investigated, In x Ga1-x N alloys or superlattices are fervently pursued because of their large range of bandgaps between 0.65eV and 3.4eV. This paper reports on the fabrication of multiple quantum wells on LiGaO2 (001) substrates by plasma-assisted molecular beam epitaxy. Metal modulated epitaxy was utilized to prevent formation of metal droplets during the growth. Streaky patterns, seen in reflection high-energy electron diffraction, indicate two-dimensional growth throughout the device. Postdeposition characterization using scanning electron microscopy also showed smooth surfaces, while high-resolution x-ray diffraction and high-resolution transmission electron microscopy confirm the epitaxial nature of the overall quantum well structure. TMS, 2013 Group III nitride nationallicence MBE nationallicence solar cell nationallicence quantum well nationallicence InN nationallicence GaN nationallicence superlattice nationallicence Wadekar P. Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, 80424, Kaohsiung, Taiwan, ROC aut Chen Q. Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, 80424, Kaohsiung, Taiwan, ROC aut Huang H. Department of Materials and Opto-electronic Science, National Sun Yat-Sen University, 80424, Kaohsiung, Taiwan, ROC aut Lin Y. Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, 80424, Kaohsiung, Taiwan, ROC aut Chang C. Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, 80424, Kaohsiung, Taiwan, ROC aut Seo H. Department of Physics, University of Arkansas, 72204, Little Rock, AR, USA aut Dung T. Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, 80424, Kaohsiung, Taiwan, ROC aut Chou M. Department of Materials and Opto-electronic Science, National Sun Yat-Sen University, 80424, Kaohsiung, Taiwan, ROC aut Feng S. Department of Applied Physics, National University of Kaohsiung, 81148, Kaohsiung, Taiwan, ROC aut Ho N. Department of Materials and Opto-electronic Science, National Sun Yat-Sen University, 80424, Kaohsiung, Taiwan, ROC aut Wijesundera D. Department of Physics and Texas Center for Superconductivity, University of Houston, 77204, Houston, TX, USA aut Chu W. Department of Physics and Texas Center for Superconductivity, University of Houston, 77204, Houston, TX, USA aut Tu L. Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, 80424, Kaohsiung, Taiwan, ROC aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/5(2013-05-01), 838-843 0361-5235 42:5<838 2013 42 11664 https://doi.org/10.1007/s11664-013-2558-3 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2558-3 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Wadekar P. Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, 80424, Kaohsiung, Taiwan, ROC aut NATIONALLICENCE 700 1- Chen Q. Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, 80424, Kaohsiung, Taiwan, ROC aut NATIONALLICENCE 700 1- Huang H. Department of Materials and Opto-electronic Science, National Sun Yat-Sen University, 80424, Kaohsiung, Taiwan, ROC aut NATIONALLICENCE 700 1- Lin Y. Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, 80424, Kaohsiung, Taiwan, ROC aut NATIONALLICENCE 700 1- Chang C. Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, 80424, Kaohsiung, Taiwan, ROC aut NATIONALLICENCE 700 1- Seo H. Department of Physics, University of Arkansas, 72204, Little Rock, AR, USA aut NATIONALLICENCE 700 1- Dung T. Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, 80424, Kaohsiung, Taiwan, ROC aut NATIONALLICENCE 700 1- Chou M. Department of Materials and Opto-electronic Science, National Sun Yat-Sen University, 80424, Kaohsiung, Taiwan, ROC aut NATIONALLICENCE 700 1- Feng S. Department of Applied Physics, National University of Kaohsiung, 81148, Kaohsiung, Taiwan, ROC aut NATIONALLICENCE 700 1- Ho N. Department of Materials and Opto-electronic Science, National Sun Yat-Sen University, 80424, Kaohsiung, Taiwan, ROC aut NATIONALLICENCE 700 1- Wijesundera D. Department of Physics and Texas Center for Superconductivity, University of Houston, 77204, Houston, TX, USA aut NATIONALLICENCE 700 1- Chu W. Department of Physics and Texas Center for Superconductivity, University of Houston, 77204, Houston, TX, USA aut NATIONALLICENCE 700 1- Tu L. Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, 80424, Kaohsiung, Taiwan, ROC aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/5(2013-05-01), 838-843 0361-5235 42:5<838 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer