naa a22 4500 510804594 CHVBK 20180411083410.0 cr unu---uuuuu 180411e20130501xx s 000 0 eng 10.1007/s11664-013-2550-y doi (NATIONALLICENCE)springer-10.1007/s11664-013-2550-y Analysis of Nonradiative Carrier Recombination Processes in InN Films by Mid-infrared Spectroscopy [Elektronische Daten] [D. Imai, Y. Ishitani, M. Fujiwara, X. Wang, K. Kusakabe, A. Yoshikawa] We investigate the reduction in the efficiency of band-edge radiative recombination in InN by two carrier recombination processes via mid-gap states: radiative recombination via deep states and nonradiative recombination (NR). Because of the small band-gap energy value and the existence of the surface electron accumulation layer, the carrier transition processes via deep states cannot be observed easily. We address this problem by using mid-infrared photoluminescence (PL) measurements, and observe an emission peak around 0.32eV at room temperature, which we interpret as being caused by transition processes via deep-defect states. Since this emission is weaker than the band-edge emission, the dominant carrier recombination process is concluded to be NR by phonon emission. The NR rate is known to be determined by the NR defect density, carrier transport processes to NR defects, and thermal activation processes of carriers. Carrier transport and capture processes by NR defects are investigated using p-type samples for various carrier mobility values. It is concluded that the NR rate is highly affected by the carrier transport, and that the candidates for the NR defect species are point defects and complexes of acceptor nature. We have also observed the correlation between the thermal conductivity and the band-edge PL intensity. As a result, we have found that the NR rate is highly affected by the carrier transport and thermal activation processes in InN. TMS, 2013 InN nationallicence nonradiative recombination nationallicence deep states nationallicence carrier transport process nationallicence thermal activation process nationallicence Imai D. Graduate School of Electronic and Electric Engineering, Chiba University, 263-8522, Chiba, Japan aut Ishitani Y. Graduate School of Electronic and Electric Engineering, Chiba University, 263-8522, Chiba, Japan aut Fujiwara M. Graduate School of Electronic and Electric Engineering, Chiba University, 263-8522, Chiba, Japan aut Wang X. State Key Laboratory of Microstructure and Mesoscopic Physics, School of Physics, Peking University, 100871, Beijing, China aut Kusakabe K. Center for SMART Green Innovation Research, Chiba University, 263-8522, Chiba, Japan aut Yoshikawa A. Center for SMART Green Innovation Research, Chiba University, 263-8522, Chiba, Japan aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/5(2013-05-01), 875-881 0361-5235 42:5<875 2013 42 11664 https://doi.org/10.1007/s11664-013-2550-y text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2550-y text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Imai D. Graduate School of Electronic and Electric Engineering, Chiba University, 263-8522, Chiba, Japan aut NATIONALLICENCE 700 1- Ishitani Y. Graduate School of Electronic and Electric Engineering, Chiba University, 263-8522, Chiba, Japan aut NATIONALLICENCE 700 1- Fujiwara M. Graduate School of Electronic and Electric Engineering, Chiba University, 263-8522, Chiba, Japan aut NATIONALLICENCE 700 1- Wang X. State Key Laboratory of Microstructure and Mesoscopic Physics, School of Physics, Peking University, 100871, Beijing, China aut NATIONALLICENCE 700 1- Kusakabe K. Center for SMART Green Innovation Research, Chiba University, 263-8522, Chiba, Japan aut NATIONALLICENCE 700 1- Yoshikawa A. Center for SMART Green Innovation Research, Chiba University, 263-8522, Chiba, Japan aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/5(2013-05-01), 875-881 0361-5235 42:5<875 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer