naa a22 4500 510804632 CHVBK 20180411083411.0 cr unu---uuuuu 180411e20130501xx s 000 0 eng 10.1007/s11664-013-2473-7 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2473-7 Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers [Elektronische Daten] [Benjamin Reuters, A. Wille, N. Ketteniss, H. Hahn, B. Holländer, M. Heuken, H. Kalisch, A. Vescan] GroupIII nitride heterostructures with low polarization difference recently moved into the focus of research for realization of enhancement-mode (e-mode) transistors. Quaternary AlInGaN layers as barriers in GaN-based high-electron-mobility transistors (HEMTs) offer the possibility to perform polarization engineering, which allows control of the threshold voltage over a wide range from negative to positive values by changing the composition and strain state of the barrier. Tensile-strained AlInGaN layers with high Al contents generate high two-dimensional electron gas (2DEG) densities, due to the large spontaneous polarization and the contributing piezoelectric polarization. To lower the 2DEG density for e-mode HEMT operation, the polarization difference between the barrier and the GaN buffer has to be reduced. Here, two different concepts are discussed. The first is to generate compressive strain with layers having high In contents in order to induce a positive piezoelectric polarization compensating the large negative spontaneous polarization. Another novel approach is a lattice-matched Ga-rich AlInGaN/GaN heterostructure with low spontaneous polarization and improved crystal quality as strain-related effects are eliminated. Both concepts for e-mode HEMTs are presented and compared in terms of electrical performance and structural properties. TMS, 2013 AlInGaN nationallicence InAlGaN nationallicence composition nationallicence polarization nationallicence HEMT nationallicence enhancement mode nationallicence Reuters Benjamin RWTH Aachen University, GaN Device Technology, Sommerfeldstrasse 24, 52074, Aachen, Germany aut Wille A. RWTH Aachen University, GaN Device Technology, Sommerfeldstrasse 24, 52074, Aachen, Germany aut Ketteniss N. RWTH Aachen University, GaN Device Technology, Sommerfeldstrasse 24, 52074, Aachen, Germany aut Hahn H. RWTH Aachen University, GaN Device Technology, Sommerfeldstrasse 24, 52074, Aachen, Germany aut Holländer B. Forschungszentrum Jülich GmbH, PGI9-IT, 52425, Jülich, Germany aut Heuken M. RWTH Aachen University, GaN Device Technology, Sommerfeldstrasse 24, 52074, Aachen, Germany aut Kalisch H. RWTH Aachen University, GaN Device Technology, Sommerfeldstrasse 24, 52074, Aachen, Germany aut Vescan A. RWTH Aachen University, GaN Device Technology, Sommerfeldstrasse 24, 52074, Aachen, Germany aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/5(2013-05-01), 826-832 0361-5235 42:5<826 2013 42 11664 https://doi.org/10.1007/s11664-013-2473-7 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2473-7 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Reuters Benjamin RWTH Aachen University, GaN Device Technology, Sommerfeldstrasse 24, 52074, Aachen, Germany aut NATIONALLICENCE 700 1- Wille A. RWTH Aachen University, GaN Device Technology, Sommerfeldstrasse 24, 52074, Aachen, Germany aut NATIONALLICENCE 700 1- Ketteniss N. RWTH Aachen University, GaN Device Technology, Sommerfeldstrasse 24, 52074, Aachen, Germany aut NATIONALLICENCE 700 1- Hahn H. RWTH Aachen University, GaN Device Technology, Sommerfeldstrasse 24, 52074, Aachen, Germany aut NATIONALLICENCE 700 1- Holländer B. Forschungszentrum Jülich GmbH, PGI9-IT, 52425, Jülich, Germany aut NATIONALLICENCE 700 1- Heuken M. RWTH Aachen University, GaN Device Technology, Sommerfeldstrasse 24, 52074, Aachen, Germany aut NATIONALLICENCE 700 1- Kalisch H. RWTH Aachen University, GaN Device Technology, Sommerfeldstrasse 24, 52074, Aachen, Germany aut NATIONALLICENCE 700 1- Vescan A. RWTH Aachen University, GaN Device Technology, Sommerfeldstrasse 24, 52074, Aachen, Germany aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/5(2013-05-01), 826-832 0361-5235 42:5<826 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer