naa a22 4500 510804640 CHVBK 20180411083411.0 cr unu---uuuuu 180411e20130501xx s 000 0 eng 10.1007/s11664-013-2537-8 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2537-8 Design and Growth of Visible-Blind and Solar-Blind III-N APDs on Sapphire Substrates [Elektronische Daten] [Puneet Suvarna, Mihir Tungare, Jeffrey Leathersich, Pratik Agnihotri, F. Shahedipour-Sandvik, L. Douglas Bell, Shouleh Nikzad] GaN-based visible-blind and AlGaN-based solar-blind avalanche photodiodes (APDs) have been grown and fabricated on sapphire substrates. The GaN p-i-n APDs show low dark current with high gain. The AlGaN layers for the Al0.55Ga0.45N-based APDs are grown using a newly developed pulsed metalorganic chemical vapor deposition (MOCVD) process, and the material characterization results show excellent material quality. The spectral responsivity of the devices show a bandpass characteristic with cutoffs in the ultraviolet (UV) visible-blind and solar-blind spectrum for GaN- and Al0.55Ga0.45N-based APDs, respectively. TMS, 2013 avalanche photodiode nationallicence solar-blind nationallicence AlGaN on sapphire nationallicence pulsed MOCVD nationallicence ultraviolet photodiode nationallicence Suvarna Puneet College of Nanoscale Science and Engineering, University at Albany, NY, USA aut Tungare Mihir College of Nanoscale Science and Engineering, University at Albany, NY, USA aut Leathersich Jeffrey College of Nanoscale Science and Engineering, University at Albany, NY, USA aut Agnihotri Pratik College of Nanoscale Science and Engineering, University at Albany, NY, USA aut Shahedipour-Sandvik F. College of Nanoscale Science and Engineering, University at Albany, NY, USA aut Douglas Bell L. Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA, USA aut Nikzad Shouleh Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/5(2013-05-01), 854-858 0361-5235 42:5<854 2013 42 11664 https://doi.org/10.1007/s11664-013-2537-8 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2537-8 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Suvarna Puneet College of Nanoscale Science and Engineering, University at Albany, NY, USA aut NATIONALLICENCE 700 1- Tungare Mihir College of Nanoscale Science and Engineering, University at Albany, NY, USA aut NATIONALLICENCE 700 1- Leathersich Jeffrey College of Nanoscale Science and Engineering, University at Albany, NY, USA aut NATIONALLICENCE 700 1- Agnihotri Pratik College of Nanoscale Science and Engineering, University at Albany, NY, USA aut NATIONALLICENCE 700 1- Shahedipour-Sandvik F. College of Nanoscale Science and Engineering, University at Albany, NY, USA aut NATIONALLICENCE 700 1- Douglas Bell L. Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA, USA aut NATIONALLICENCE 700 1- Nikzad Shouleh Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/5(2013-05-01), 854-858 0361-5235 42:5<854 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer