naa a22 4500 510804659 CHVBK 20180411083411.0 cr unu---uuuuu 180411e20130501xx s 000 0 eng 10.1007/s11664-013-2491-5 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2491-5 Ion-Implantation-Induced Damage Characteristics Within AlN and Si for GaN-on-Si Epitaxy [Elektronische Daten] [Jeffrey Leathersich, Mihir Tungare, Xiaojun Weng, Puneet Suvarna, Pratik Agnihotri, Morgan Evans, Joan Redwing, F. Shahedipour-Sandvik] A systematic study was conducted to further understand the physical origin of stress modification in AlN overgrown on Si(111) upon ion implantation and annealing. Implantation parameters including ion size, energy, dosage, and current density were varied, and their effects on the amorphization process in Si(111) substrates were examined. The creation of a thick (>120nm) amorphous Si (a-Si) layer was previously shown to result in isolation of an epitaxial AlN film grown on a Si(111) substrate through implantation-induced amorphization of the substrate, and this mechanical isolation resulted in stress dilution in the AlN layer. Results show that implanting at current density of 2mA/cm2 allows for only a thin amorphous layer to be created because of the effects of dynamic annealing, which simultaneously eliminates any damage created from the ion implantation, regardless of ion species, dosage, and energy. Lowering the current density to 0.2mA/cm2 does create a thick a-Si layer; however, the amorphization disappears during a high-temperature (HT) anneal. Lowering the current further to 0.2μA/cm2 creates a thick a-Si layer that can be maintained through a HT anneal, with this difference arising from the interfacial quality of the a-Si and crystalline Si (c-Si) boundary. TMS, 2013 MOCVD nationallicence implantation nationallicence GaN nationallicence Si(111) nationallicence amorphous nationallicence amorphization nationallicence dynamic annealing nationallicence annealing nationallicence epitaxy nationallicence SPEG nationallicence Leathersich Jeffrey College of Nanoscale Science and Engineering, University at Albany, Albany, NY, USA aut Tungare Mihir College of Nanoscale Science and Engineering, University at Albany, Albany, NY, USA aut Weng Xiaojun Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA aut Suvarna Puneet College of Nanoscale Science and Engineering, University at Albany, Albany, NY, USA aut Agnihotri Pratik College of Nanoscale Science and Engineering, University at Albany, Albany, NY, USA aut Evans Morgan Varian Semiconductor Equipment, 01930-2297, Gloucester, MA, USA aut Redwing Joan Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA aut Shahedipour-Sandvik F. College of Nanoscale Science and Engineering, University at Albany, Albany, NY, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/5(2013-05-01), 833-837 0361-5235 42:5<833 2013 42 11664 https://doi.org/10.1007/s11664-013-2491-5 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2491-5 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Leathersich Jeffrey College of Nanoscale Science and Engineering, University at Albany, Albany, NY, USA aut NATIONALLICENCE 700 1- Tungare Mihir College of Nanoscale Science and Engineering, University at Albany, Albany, NY, USA aut NATIONALLICENCE 700 1- Weng Xiaojun Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA aut NATIONALLICENCE 700 1- Suvarna Puneet College of Nanoscale Science and Engineering, University at Albany, Albany, NY, USA aut NATIONALLICENCE 700 1- Agnihotri Pratik College of Nanoscale Science and Engineering, University at Albany, Albany, NY, USA aut NATIONALLICENCE 700 1- Evans Morgan Varian Semiconductor Equipment, 01930-2297, Gloucester, MA, USA aut NATIONALLICENCE 700 1- Redwing Joan Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA aut NATIONALLICENCE 700 1- Shahedipour-Sandvik F. College of Nanoscale Science and Engineering, University at Albany, Albany, NY, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/5(2013-05-01), 833-837 0361-5235 42:5<833 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer