naa a22 4500 510804667 CHVBK 20180411083411.0 cr unu---uuuuu 180411e20130501xx s 000 0 eng 10.1007/s11664-013-2526-y doi (NATIONALLICENCE)springer-10.1007/s11664-013-2526-y Nanoplasmonic Enhanced ZnO/Si HeterojunctionMetal-Semiconductor-Metal Photodetectors [Elektronische Daten] [Chong Tong, Juhyung Yun, Eric Kozarsky, Wayne Anderson] This paper presents a nanoplasmonic enhanced ZnO/Si heterojunction metal-semiconductor-metal (MSM) photodetector (PD). By depositing different thicknesses of Ag thin film and annealing at a moderate temperature, well-defined silver (Ag) nanoparticles (NPs) with different diameters, densities, and size distributions were produced on the surface of ZnO/Si MSM photodetector devices. By tuning the characteristics of these NPs, a higher-performance ZnO/Si MSM photodetector has been realized. The photocurrent of the detector with NPs was increased by 160% to 680%, depending on the applied voltage. The spectral photocurrent enhancement by a factor of 7 to 18 was broadband from 350nm to 850nm. TMS, 2013 ZnO/Si heterojunction nationallicence nanoparticles nationallicence MSM photodetector nationallicence nanoplasmonic enhanced device nationallicence Tong Chong Department of Electrical Engineering, State University of New York at Buffalo, 14260-1920, Buffalo, NY, USA aut Yun Juhyung Department of Electrical Engineering, State University of New York at Buffalo, 14260-1920, Buffalo, NY, USA aut Kozarsky Eric Department of Electrical Engineering, State University of New York at Buffalo, 14260-1920, Buffalo, NY, USA aut Anderson Wayne Department of Electrical Engineering, State University of New York at Buffalo, 14260-1920, Buffalo, NY, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/5(2013-05-01), 889-893 0361-5235 42:5<889 2013 42 11664 https://doi.org/10.1007/s11664-013-2526-y text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2526-y text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Tong Chong Department of Electrical Engineering, State University of New York at Buffalo, 14260-1920, Buffalo, NY, USA aut NATIONALLICENCE 700 1- Yun Juhyung Department of Electrical Engineering, State University of New York at Buffalo, 14260-1920, Buffalo, NY, USA aut NATIONALLICENCE 700 1- Kozarsky Eric Department of Electrical Engineering, State University of New York at Buffalo, 14260-1920, Buffalo, NY, USA aut NATIONALLICENCE 700 1- Anderson Wayne Department of Electrical Engineering, State University of New York at Buffalo, 14260-1920, Buffalo, NY, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/5(2013-05-01), 889-893 0361-5235 42:5<889 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer