naa a22 4500 510804683 CHVBK 20180411083411.0 cr unu---uuuuu 180411e20130501xx s 000 0 eng 10.1007/s11664-012-2444-4 doi (NATIONALLICENCE)springer-10.1007/s11664-012-2444-4 A Comparison of ZnO Nanowires and Nanorods Grown Using MOCVD and Hydrothermal Processes [Elektronische Daten] [Abdiel Rivera, John Zeller, Ashok Sood, Mehdi Anwar] A comparison of ZnO nanowires (NWs) and nanorods (NRs) grown using metalorganic chemical vapor deposition (MOCVD) and hydrothermal synthesis, respectively, on p-Si (100), GaN/sapphire, and SiO2 substrates is reported. Scanning electron microscopy (SEM) images reveal that ZnO NWs grown using MOCVD had diameters varying from 20nm to 150nm and approximate lengths ranging from 0.7μm to 2μm. The NWs exhibited clean termination/tips in the absence of any secondary nucleation. The NRs grown using the hydrothermal method had diameters varying between 200nm and 350nm with approximate lengths between 0.7μm and 1μm. However, the NRs grown on p-Si overlapped with each other and showed secondary nucleation. x-Ray diffraction (XRD) of (0002)-oriented ZnO NWs grown on GaN using MOCVD demonstrated a full-width at half-maximum (FWHM) of 0.0498 (θ) compared with 0.052 (θ) for ZnO NRs grown on similar substrates using hydrothermal synthesis, showing better crystal quality. Similar crystal quality was observed for NWs grown on p-Si and SiO2 substrates. Photoluminescence (PL) of the NWs grown on p-Si and SiO2 showed a single absorption peak attributed to exciton-exciton recombination. ZnO NWs grown on GaN/sapphire had defects associated with oxygen interstitials and oxygen vacancies. TMS, 2013 ZnO nationallicence nanowires nationallicence nanorods nationallicence MOCVD nationallicence hydrothermal nationallicence photoluminescence nationallicence Rivera Abdiel Electrical and Computer Engineering, University of Connecticut, 06269, Storrs, CT, USA aut Zeller John Magnolia Optical Technologies, 01801, Woburn, MA, USA aut Sood Ashok Magnolia Optical Technologies, 01801, Woburn, MA, USA aut Anwar Mehdi Electrical and Computer Engineering, University of Connecticut, 06269, Storrs, CT, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/5(2013-05-01), 894-900 0361-5235 42:5<894 2013 42 11664 https://doi.org/10.1007/s11664-012-2444-4 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2444-4 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Rivera Abdiel Electrical and Computer Engineering, University of Connecticut, 06269, Storrs, CT, USA aut NATIONALLICENCE 700 1- Zeller John Magnolia Optical Technologies, 01801, Woburn, MA, USA aut NATIONALLICENCE 700 1- Sood Ashok Magnolia Optical Technologies, 01801, Woburn, MA, USA aut NATIONALLICENCE 700 1- Anwar Mehdi Electrical and Computer Engineering, University of Connecticut, 06269, Storrs, CT, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/5(2013-05-01), 894-900 0361-5235 42:5<894 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer