naa a22 4500 510804705 CHVBK 20180411083411.0 cr unu---uuuuu 180411e20130501xx s 000 0 eng 10.1007/s11664-013-2499-x doi (NATIONALLICENCE)springer-10.1007/s11664-013-2499-x Double-Pulsed Growth of InN by RF-MBE [Elektronische Daten] [Andreas Kraus, Heiko Bremers, Uwe Rossow, Andreas Hangleiter] The initial steps of three different methods for growth of InN were investigated. For this purpose, layers of approximately 15nm thickness were grown by applying continuous, pulsed or double-pulsed source fluxes. The surface morphologies were investigated by atomic force microscopy and scanning electron microscopy. The structural properties were investigated by reflection high- energy electron diffraction and high-resolution x-ray diffraction. For the continuous and pulsed growth methods, fine-grained structures with grain sizes of approximately 80nm and 120nm are observed. In contrast, the double-pulsed growth method leads to surface morphologies made of atomically flat, nearly 2-μm-sized grains. Furthermore, XRD ω scans of the InN (0002) reflection show that the full-width at half-maximum (FWHM) values are smallest for this method. These results were used to develop a new growth method that enables growth of atomically flat InN surfaces without any evidence of metallic In within or on top of the layer. TMS, 2013 Molecular-beam epitaxy nationallicence InN nationallicence XRD nationallicence AFM nationallicence Kraus Andreas Institute of Applied Physics, Technische Universität Braunschweig, Mendelssohnstr. 2, 38106, Braunschweig, Germany aut Bremers Heiko Institute of Applied Physics, Technische Universität Braunschweig, Mendelssohnstr. 2, 38106, Braunschweig, Germany aut Rossow Uwe Institute of Applied Physics, Technische Universität Braunschweig, Mendelssohnstr. 2, 38106, Braunschweig, Germany aut Hangleiter Andreas Institute of Applied Physics, Technische Universität Braunschweig, Mendelssohnstr. 2, 38106, Braunschweig, Germany aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/5(2013-05-01), 849-853 0361-5235 42:5<849 2013 42 11664 https://doi.org/10.1007/s11664-013-2499-x text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2499-x text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kraus Andreas Institute of Applied Physics, Technische Universität Braunschweig, Mendelssohnstr. 2, 38106, Braunschweig, Germany aut NATIONALLICENCE 700 1- Bremers Heiko Institute of Applied Physics, Technische Universität Braunschweig, Mendelssohnstr. 2, 38106, Braunschweig, Germany aut NATIONALLICENCE 700 1- Rossow Uwe Institute of Applied Physics, Technische Universität Braunschweig, Mendelssohnstr. 2, 38106, Braunschweig, Germany aut NATIONALLICENCE 700 1- Hangleiter Andreas Institute of Applied Physics, Technische Universität Braunschweig, Mendelssohnstr. 2, 38106, Braunschweig, Germany aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/5(2013-05-01), 849-853 0361-5235 42:5<849 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer