naa a22 4500 510804713 CHVBK 20180411083411.0 cr unu---uuuuu 180411e20130501xx s 000 0 eng 10.1007/s11664-013-2527-x doi (NATIONALLICENCE)springer-10.1007/s11664-013-2527-x Quantitative Comparison Between Dislocation Densitiesin Offcut 4H-SiC Wafers Measured Using SynchrotronX-ray Topography and Molten KOH Etching [Elektronische Daten] [Huanhuan Wang, Shun Sun, Michael Dudley, Shayan Byrappa, Fangzhen Wu, Balaji Raghothamachar, Gil Chung, Edward Sanchez, Stephan Mueller, Darren Hansen, Mark Loboda] Molten KOH etching and x-ray topography have been well established as two of the major characterization techniques used for observing as well as analyzing the various crystallographic defects in both substrates and homoepitaxial layers of silicon carbide. Regarding assessment of dislocation density in commercial wafers, though the two techniques show good consistency in threading dislocation density analysis, significant discrepancy is found in the case of basal plane dislocations (BPDs). In this paper we compare measurements of BPD densities in 4-inch 4H-SiC commercial wafers assessed using both etching and topography methods. The ratio of the BPD density calculated from topographic images to that from etch pits is estimated to be larger than 1/sinθ, where θ is the offcut angle of the wafer. Based on the orientations of the defects in the wafers, a theoretical model is put forward to explain this disparity and two main sources of errors in assessing the BPD density using chemical etching are discussed. TMS, 2013 SiC nationallicence molten KOH etching nationallicence x-ray topography nationallicence basal plane dislocation nationallicence dislocation density nationallicence Wang Huanhuan Department of Materials Science and Engineering, Stony Brook University, 11794, Stony Brook, NY, USA aut Sun Shun Department of Materials Science and Engineering, Stony Brook University, 11794, Stony Brook, NY, USA aut Dudley Michael Department of Materials Science and Engineering, Stony Brook University, 11794, Stony Brook, NY, USA aut Byrappa Shayan Department of Materials Science and Engineering, Stony Brook University, 11794, Stony Brook, NY, USA aut Wu Fangzhen Department of Materials Science and Engineering, Stony Brook University, 11794, Stony Brook, NY, USA aut Raghothamachar Balaji Department of Materials Science and Engineering, Stony Brook University, 11794, Stony Brook, NY, USA aut Chung Gil Dow Corning Compound Semiconductor Solutions, 48686, Midland, MI, USA aut Sanchez Edward Dow Corning Compound Semiconductor Solutions, 48686, Midland, MI, USA aut Mueller Stephan Dow Corning Compound Semiconductor Solutions, 48686, Midland, MI, USA aut Hansen Darren Dow Corning Compound Semiconductor Solutions, 48686, Midland, MI, USA aut Loboda Mark Dow Corning Compound Semiconductor Solutions, 48686, Midland, MI, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/5(2013-05-01), 794-798 0361-5235 42:5<794 2013 42 11664 https://doi.org/10.1007/s11664-013-2527-x text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2527-x text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Wang Huanhuan Department of Materials Science and Engineering, Stony Brook University, 11794, Stony Brook, NY, USA aut NATIONALLICENCE 700 1- Sun Shun Department of Materials Science and Engineering, Stony Brook University, 11794, Stony Brook, NY, USA aut NATIONALLICENCE 700 1- Dudley Michael Department of Materials Science and Engineering, Stony Brook University, 11794, Stony Brook, NY, USA aut NATIONALLICENCE 700 1- Byrappa Shayan Department of Materials Science and Engineering, Stony Brook University, 11794, Stony Brook, NY, USA aut NATIONALLICENCE 700 1- Wu Fangzhen Department of Materials Science and Engineering, Stony Brook University, 11794, Stony Brook, NY, USA aut NATIONALLICENCE 700 1- Raghothamachar Balaji Department of Materials Science and Engineering, Stony Brook University, 11794, Stony Brook, NY, USA aut NATIONALLICENCE 700 1- Chung Gil Dow Corning Compound Semiconductor Solutions, 48686, Midland, MI, USA aut NATIONALLICENCE 700 1- Sanchez Edward Dow Corning Compound Semiconductor Solutions, 48686, Midland, MI, USA aut NATIONALLICENCE 700 1- Mueller Stephan Dow Corning Compound Semiconductor Solutions, 48686, Midland, MI, USA aut NATIONALLICENCE 700 1- Hansen Darren Dow Corning Compound Semiconductor Solutions, 48686, Midland, MI, USA aut NATIONALLICENCE 700 1- Loboda Mark Dow Corning Compound Semiconductor Solutions, 48686, Midland, MI, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/5(2013-05-01), 794-798 0361-5235 42:5<794 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer