naa a22 4500 510804721 CHVBK 20180411083411.0 cr unu---uuuuu 180411e20130501xx s 000 0 eng 10.1007/s11664-013-2528-9 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2528-9 Conduction- and Valence-Band Energies in Bulk InAs1− x Sb x and TypeII InAs1− x Sb x /InAs Strained-Layer Superlattices [Elektronische Daten] [Youxi Lin, Ding Wang, Dmitry Donetsky, Leon Shterengas, Gela Kipshidze, Gregory Belenky, Stefan Svensson, Wendy Sarney, Harry Hier] The energy gaps were studied in two types of structures: unrelaxed bulk InAs1−x Sb x layers with x=0.2 to 0.46 grown on metamorphic buffers and typeII InAs1−x Sb x /InAs strained-layer superlattices (SLS) with x=0.225 to 0.296 in the temperature range from T=13K to 300K. All structures were grown on GaSb substrates. The longest wavelength of photoluminescence (PL) at low temperatures was observed from bulk InAs0.56Sb0.44 with a peak at 10.3μm and full-width at half-maximum (FWHM) of 11meV. The PL data for the bulk InAs1−x Sb x materials of various compositions imply an energy gap bowing parameter of 0.87eV. A low-temperature PL peak at 9.1μm with FWHM of 13meV was observed for InAs0.704Sb0.296/InAs SLS. The PL spectrum of InAs0.775Sb0.225/InAs SLS under pulsed excitation revealed a second peak associated with recombination of electrons in the three-dimensional (3D) continuum with holes in the InAs0.775Sb0.225. This experiment determined the conduction-band offset in the InAs0.775Sb0.225/InAs SLS. The energies of the conduction and valence bands in unstrained InAs1−x Sb x and their bowing with respect to the Sb composition are discussed. TMS, 2013 InAsSb nationallicence SLS nationallicence energy-band offsets nationallicence bowing nationallicence broadening nationallicence Lin Youxi Department of ECE, Stony Brook University, 11794, Stony Brook, NY, USA aut Wang Ding Department of ECE, Stony Brook University, 11794, Stony Brook, NY, USA aut Donetsky Dmitry Department of ECE, Stony Brook University, 11794, Stony Brook, NY, USA aut Shterengas Leon Department of ECE, Stony Brook University, 11794, Stony Brook, NY, USA aut Kipshidze Gela Department of ECE, Stony Brook University, 11794, Stony Brook, NY, USA aut Belenky Gregory Department of ECE, Stony Brook University, 11794, Stony Brook, NY, USA aut Svensson Stefan Army Research Laboratory, 20783, MD, Adelphi, USA aut Sarney Wendy Army Research Laboratory, 20783, MD, Adelphi, USA aut Hier Harry Army Research Laboratory, 20783, MD, Adelphi, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/5(2013-05-01), 918-926 0361-5235 42:5<918 2013 42 11664 https://doi.org/10.1007/s11664-013-2528-9 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2528-9 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Lin Youxi Department of ECE, Stony Brook University, 11794, Stony Brook, NY, USA aut NATIONALLICENCE 700 1- Wang Ding Department of ECE, Stony Brook University, 11794, Stony Brook, NY, USA aut NATIONALLICENCE 700 1- Donetsky Dmitry Department of ECE, Stony Brook University, 11794, Stony Brook, NY, USA aut NATIONALLICENCE 700 1- Shterengas Leon Department of ECE, Stony Brook University, 11794, Stony Brook, NY, USA aut NATIONALLICENCE 700 1- Kipshidze Gela Department of ECE, Stony Brook University, 11794, Stony Brook, NY, USA aut NATIONALLICENCE 700 1- Belenky Gregory Department of ECE, Stony Brook University, 11794, Stony Brook, NY, USA aut NATIONALLICENCE 700 1- Svensson Stefan Army Research Laboratory, 20783, MD, Adelphi, USA aut NATIONALLICENCE 700 1- Sarney Wendy Army Research Laboratory, 20783, MD, Adelphi, USA aut NATIONALLICENCE 700 1- Hier Harry Army Research Laboratory, 20783, MD, Adelphi, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/5(2013-05-01), 918-926 0361-5235 42:5<918 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer