naa a22 4500 510804756 CHVBK 20180411083411.0 cr unu---uuuuu 180411e20130501xx s 000 0 eng 10.1007/s11664-012-2373-2 doi (NATIONALLICENCE)springer-10.1007/s11664-012-2373-2 Si Doping of GaN in Hydride Vapor-Phase Epitaxy [Elektronische Daten] [E. Richter, T. Stoica, U. Zeimer, C. Netzel, M. Weyers, G. Tränkle] Growth of GaN boules by hydride vapor-phase epitaxy (HVPE) is very attractive for fabrication of GaN substrates. Use of dichlorosilane as a source for Si doping of bulk GaN is investigated. It is shown that no tensile strain is incorporated into mm-thick, Si-doped GaN layers on sapphire substrates if the threading dislocation density is previously reduced to 2.5×107cm−2 or below. High-quality GaN layers with electron densities up to 1.5×1019cm−3 have been achieved, and an upper limit of about 4×1019cm−3 for Si doping of GaN boules was deduced considering the evolution of dislocations with thickness. A 2-inch, Si-doped GaN crystal with length exceeding 6mm and targeted Si doping of about 1×1018cm−3 is demonstrated. TMS, 2012 HVPE nationallicence GaN nationallicence bulk nationallicence Si doping nationallicence defects nationallicence strain nationallicence Richter E. Ferdinand-Braun-Institut, Gustav-Kirchhoff-Str. 4, 12489, Berlin, Germany aut Stoica T. Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, and Jülich-Aachen Research Alliance (JARA), 52425, Jülich, Germany aut Zeimer U. Ferdinand-Braun-Institut, Gustav-Kirchhoff-Str. 4, 12489, Berlin, Germany aut Netzel C. Ferdinand-Braun-Institut, Gustav-Kirchhoff-Str. 4, 12489, Berlin, Germany aut Weyers M. Ferdinand-Braun-Institut, Gustav-Kirchhoff-Str. 4, 12489, Berlin, Germany aut Tränkle G. Ferdinand-Braun-Institut, Gustav-Kirchhoff-Str. 4, 12489, Berlin, Germany aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/5(2013-05-01), 820-825 0361-5235 42:5<820 2013 42 11664 https://doi.org/10.1007/s11664-012-2373-2 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2373-2 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Richter E. Ferdinand-Braun-Institut, Gustav-Kirchhoff-Str. 4, 12489, Berlin, Germany aut NATIONALLICENCE 700 1- Stoica T. Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, and Jülich-Aachen Research Alliance (JARA), 52425, Jülich, Germany aut NATIONALLICENCE 700 1- Zeimer U. Ferdinand-Braun-Institut, Gustav-Kirchhoff-Str. 4, 12489, Berlin, Germany aut NATIONALLICENCE 700 1- Netzel C. Ferdinand-Braun-Institut, Gustav-Kirchhoff-Str. 4, 12489, Berlin, Germany aut NATIONALLICENCE 700 1- Weyers M. Ferdinand-Braun-Institut, Gustav-Kirchhoff-Str. 4, 12489, Berlin, Germany aut NATIONALLICENCE 700 1- Tränkle G. Ferdinand-Braun-Institut, Gustav-Kirchhoff-Str. 4, 12489, Berlin, Germany aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/5(2013-05-01), 820-825 0361-5235 42:5<820 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer