naa a22 4500 510804764 CHVBK 20180411083411.0 cr unu---uuuuu 180411e20130501xx s 000 0 eng 10.1007/s11664-012-2379-9 doi (NATIONALLICENCE)springer-10.1007/s11664-012-2379-9 Characterization and Formation Mechanism of Six Pointed Star-Type Stacking Faults in 4H-SiC [Elektronische Daten] [Fangzhen Wu, Huanhuan Wang, Shayan Byrappa, Balaji Raghothamachar, Michael Dudley, Ping Wu, Xueping Xu, Ilya Zwieback] Synchrotron white-beam x-ray topography (SWBXT) studies of defects in 100-mm-diameter 4H-SiC wafers grown using physical vapor transport are presented. SWBXT enables nondestructive examination of thick and large-diameter SiC wafers, and defects can be imaged directly. Analysis of the contrast from these defects enables determination of their configuration, which, in turn, provides insight into their possible formation mechanisms. Apart from the usual defects present in the wafers, including micropipes, threading edge dislocations, threading screw dislocations, and basal plane dislocations, a new stacking fault with a peculiar configuration attracts our interest. This fault has the shape of a six-pointed star, comprising faults with three different fault vectors of Shockley type. Transmission and grazing topography of the fault area are carried out, and detailed contrast analysis reveals that the outline of the star is confined by 30° Shockley partial dislocations. A micropipe, which became the source of dislocations on both the basal plane slip system and the prismatic slip system, is found to be associated with the formation of the star fault. The postulated mechanism involves the reaction of 60° dislocations of a/3 〈 $$ \bar{2}110 $$ 〉 Burgers vector on basal plane and pure screw dislocations of a/3 〈 $$ 11\bar{2}0 $$ 〉 Burgers vector on prismatic plane and cross slip of the partial dislocation from prismatic plane to basal plane leading to expansion of the faults. TMS, 2012 Silicon carbide nationallicence stacking fault nationallicence micropipe nationallicence x-ray topography nationallicence Wu Fangzhen Materials Science and Engineering, Stony Brook University, Stony Brook, NY, USA aut Wang Huanhuan Materials Science and Engineering, Stony Brook University, Stony Brook, NY, USA aut Byrappa Shayan Materials Science and Engineering, Stony Brook University, Stony Brook, NY, USA aut Raghothamachar Balaji Materials Science and Engineering, Stony Brook University, Stony Brook, NY, USA aut Dudley Michael Materials Science and Engineering, Stony Brook University, Stony Brook, NY, USA aut Wu Ping II-VI Incorporated, Wide Bandgap Materials Group, Pine Brook, NJ, USA aut Xu Xueping II-VI Incorporated, Wide Bandgap Materials Group, Pine Brook, NJ, USA aut Zwieback Ilya II-VI Incorporated, Wide Bandgap Materials Group, Pine Brook, NJ, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/5(2013-05-01), 787-793 0361-5235 42:5<787 2013 42 11664 https://doi.org/10.1007/s11664-012-2379-9 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2379-9 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Wu Fangzhen Materials Science and Engineering, Stony Brook University, Stony Brook, NY, USA aut NATIONALLICENCE 700 1- Wang Huanhuan Materials Science and Engineering, Stony Brook University, Stony Brook, NY, USA aut NATIONALLICENCE 700 1- Byrappa Shayan Materials Science and Engineering, Stony Brook University, Stony Brook, NY, USA aut NATIONALLICENCE 700 1- Raghothamachar Balaji Materials Science and Engineering, Stony Brook University, Stony Brook, NY, USA aut NATIONALLICENCE 700 1- Dudley Michael Materials Science and Engineering, Stony Brook University, Stony Brook, NY, USA aut NATIONALLICENCE 700 1- Wu Ping II-VI Incorporated, Wide Bandgap Materials Group, Pine Brook, NJ, USA aut NATIONALLICENCE 700 1- Xu Xueping II-VI Incorporated, Wide Bandgap Materials Group, Pine Brook, NJ, USA aut NATIONALLICENCE 700 1- Zwieback Ilya II-VI Incorporated, Wide Bandgap Materials Group, Pine Brook, NJ, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/5(2013-05-01), 787-793 0361-5235 42:5<787 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer