naa a22 4500 510804772 CHVBK 20180411083411.0 cr unu---uuuuu 180411e20130501xx s 000 0 eng 10.1007/s11664-013-2544-9 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2544-9 Molecular Beam Epitaxy of Graded-Composition InGaN Nanowires [Elektronische Daten] [Masihhur Laskar, Santino Carnevale, A. Sarwar, Patrick Phillips, Michael Mills, Roberto Myers] We report the growth of graded InGaN nanowires by plasma-assisted molecular beam epitaxy. Wire composition is linearly graded from InN to GaN along the length of each wire. The large lattice mismatch between GaN and InN (11%) introduces tensile strain in the graded region, which results in cracking of the wires. Growing with reverse grading (i.e., GaN to InN) results in crack-free nanowires. The composition is measured by energy-dispersive x-ray spectroscopy of individual nanowires performed in a scanning transmission electron microscope, and strain is measured by high-resolution x-ray diffraction. TMS, 2013 InGaN nationallicence nanowires nationallicence composition gradient nationallicence strain relaxation nationallicence nitrides nationallicence molecular beam epitaxy nationallicence Laskar Masihhur Department of Material Science and Engineering, The Ohio State University, 43210, Columbus, OH, USA aut Carnevale Santino Department of Material Science and Engineering, The Ohio State University, 43210, Columbus, OH, USA aut Sarwar A. Department of Electrical and Computer Engineering, The Ohio State University, 43210, Columbus, OH, USA aut Phillips Patrick Department of Physics, University of Illinois at Chicago, 60607, Chicago, IL, USA aut Mills Michael Department of Material Science and Engineering, The Ohio State University, 43210, Columbus, OH, USA aut Myers Roberto Department of Material Science and Engineering, The Ohio State University, 43210, Columbus, OH, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/5(2013-05-01), 863-867 0361-5235 42:5<863 2013 42 11664 https://doi.org/10.1007/s11664-013-2544-9 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2544-9 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Laskar Masihhur Department of Material Science and Engineering, The Ohio State University, 43210, Columbus, OH, USA aut NATIONALLICENCE 700 1- Carnevale Santino Department of Material Science and Engineering, The Ohio State University, 43210, Columbus, OH, USA aut NATIONALLICENCE 700 1- Sarwar A. Department of Electrical and Computer Engineering, The Ohio State University, 43210, Columbus, OH, USA aut NATIONALLICENCE 700 1- Phillips Patrick Department of Physics, University of Illinois at Chicago, 60607, Chicago, IL, USA aut NATIONALLICENCE 700 1- Mills Michael Department of Material Science and Engineering, The Ohio State University, 43210, Columbus, OH, USA aut NATIONALLICENCE 700 1- Myers Roberto Department of Material Science and Engineering, The Ohio State University, 43210, Columbus, OH, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/5(2013-05-01), 863-867 0361-5235 42:5<863 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer