<?xml version="1.0" encoding="UTF-8"?>
<collection xmlns="http://www.loc.gov/MARC21/slim">
 <record>
  <leader>     naa a22        4500</leader>
  <controlfield tag="001">510804837</controlfield>
  <controlfield tag="003">CHVBK</controlfield>
  <controlfield tag="005">20180411083412.0</controlfield>
  <controlfield tag="007">cr unu---uuuuu</controlfield>
  <controlfield tag="008">180411e20130201xx      s     000 0 eng  </controlfield>
  <datafield tag="024" ind1="7" ind2="0">
   <subfield code="a">10.1007/s11664-012-2302-4</subfield>
   <subfield code="2">doi</subfield>
  </datafield>
  <datafield tag="035" ind1=" " ind2=" ">
   <subfield code="a">(NATIONALLICENCE)springer-10.1007/s11664-012-2302-4</subfield>
  </datafield>
  <datafield tag="245" ind1="0" ind2="0">
   <subfield code="a">Study of Intermetallic Growth and Kinetics in Fine-Pitch Lead-Free Solder Bumps for Next-Generation Flip-Chip Assemblies</subfield>
   <subfield code="h">[Elektronische Daten]</subfield>
   <subfield code="c">[Ye Tian, Justin Chow, Xi Liu, Yi Wu, Suresh Sitaraman]</subfield>
  </datafield>
  <datafield tag="520" ind1="3" ind2=" ">
   <subfield code="a">With continued advances in microelectronics, it is anticipated that next-generation microelectronic assemblies will require a reduction of the flip-chip solder bump pitch to 100μm or less from the current industrial practice of 130μm to 150μm. With this reduction in pitch size, and thus in bump height and diameter, the interaction between die pad metallurgy and substrate pad metallurgy becomes more critical due to the shorter diffusion path and greater stress. Existing literature has not addressed such metallurgical interaction in actual fine-pitch flip-chip assemblies. This work studies intermetallic growth and kinetics in fine-pitch lead-free solder bumps through thermal aging of flip-chip assemblies. Based on this study, it is seen that Ni from the die pad diffuses to the substrate pad region and Cu from the substrate pad diffuses to the die pad region, thus the resulting intermetallic compounds at the die and substrate pad regions are influenced by the other pad as well. Such cross-pad interaction is much stronger in fine-pitch solder bumps with smaller standoff height. It is seen that the die pad region contains Ni3P and (Cu,Ni)6Sn5 after thermal aging, while the substrate pad region contains Cu3Sn and (Cu,Ni)6Sn5. By digitally measuring the thickness of the interfacial phases, the kinetics parameters and the activation energy were calculated for the growth of (Cu,Ni)6Sn5 on the substrate side. The Cu diffusion coefficient through the intermetallic compound (IMC) layer was found to be 0.03370μm2/h, 0.1423μm2/h, and 0.4463μm2/h at 100°C, 125°C, and 150°C, respectively, and the apparent activation energy for the growth of compound layers was 67.89kJ/mol.</subfield>
  </datafield>
  <datafield tag="540" ind1=" " ind2=" ">
   <subfield code="a">TMS, 2012</subfield>
  </datafield>
  <datafield tag="690" ind1=" " ind2="7">
   <subfield code="a">Lead-free solders</subfield>
   <subfield code="2">nationallicence</subfield>
  </datafield>
  <datafield tag="690" ind1=" " ind2="7">
   <subfield code="a">intermetallic compounds</subfield>
   <subfield code="2">nationallicence</subfield>
  </datafield>
  <datafield tag="690" ind1=" " ind2="7">
   <subfield code="a">microstructure evolution</subfield>
   <subfield code="2">nationallicence</subfield>
  </datafield>
  <datafield tag="690" ind1=" " ind2="7">
   <subfield code="a">cross-reaction</subfield>
   <subfield code="2">nationallicence</subfield>
  </datafield>
  <datafield tag="700" ind1="1" ind2=" ">
   <subfield code="a">Tian</subfield>
   <subfield code="D">Ye</subfield>
   <subfield code="u">School of Materials Science and Engineering, HuaZhong University of Science and Technology, 430074, Wuhan, China</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="700" ind1="1" ind2=" ">
   <subfield code="a">Chow</subfield>
   <subfield code="D">Justin</subfield>
   <subfield code="u">The George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, 30332, Atlanta, GA, USA</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="700" ind1="1" ind2=" ">
   <subfield code="a">Liu</subfield>
   <subfield code="D">Xi</subfield>
   <subfield code="u">The George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, 30332, Atlanta, GA, USA</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="700" ind1="1" ind2=" ">
   <subfield code="a">Wu</subfield>
   <subfield code="D">Yi</subfield>
   <subfield code="u">School of Materials Science and Engineering, HuaZhong University of Science and Technology, 430074, Wuhan, China</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="700" ind1="1" ind2=" ">
   <subfield code="a">Sitaraman</subfield>
   <subfield code="D">Suresh</subfield>
   <subfield code="u">The George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, 30332, Atlanta, GA, USA</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="773" ind1="0" ind2=" ">
   <subfield code="t">Journal of Electronic Materials</subfield>
   <subfield code="d">Springer US; http://www.springer-ny.com</subfield>
   <subfield code="g">42/2(2013-02-01), 230-239</subfield>
   <subfield code="x">0361-5235</subfield>
   <subfield code="q">42:2&lt;230</subfield>
   <subfield code="1">2013</subfield>
   <subfield code="2">42</subfield>
   <subfield code="o">11664</subfield>
  </datafield>
  <datafield tag="856" ind1="4" ind2="0">
   <subfield code="u">https://doi.org/10.1007/s11664-012-2302-4</subfield>
   <subfield code="q">text/html</subfield>
   <subfield code="z">Onlinezugriff via DOI</subfield>
  </datafield>
  <datafield tag="908" ind1=" " ind2=" ">
   <subfield code="D">1</subfield>
   <subfield code="a">research-article</subfield>
   <subfield code="2">jats</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">856</subfield>
   <subfield code="E">40</subfield>
   <subfield code="u">https://doi.org/10.1007/s11664-012-2302-4</subfield>
   <subfield code="q">text/html</subfield>
   <subfield code="z">Onlinezugriff via DOI</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">700</subfield>
   <subfield code="E">1-</subfield>
   <subfield code="a">Tian</subfield>
   <subfield code="D">Ye</subfield>
   <subfield code="u">School of Materials Science and Engineering, HuaZhong University of Science and Technology, 430074, Wuhan, China</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">700</subfield>
   <subfield code="E">1-</subfield>
   <subfield code="a">Chow</subfield>
   <subfield code="D">Justin</subfield>
   <subfield code="u">The George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, 30332, Atlanta, GA, USA</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">700</subfield>
   <subfield code="E">1-</subfield>
   <subfield code="a">Liu</subfield>
   <subfield code="D">Xi</subfield>
   <subfield code="u">The George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, 30332, Atlanta, GA, USA</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">700</subfield>
   <subfield code="E">1-</subfield>
   <subfield code="a">Wu</subfield>
   <subfield code="D">Yi</subfield>
   <subfield code="u">School of Materials Science and Engineering, HuaZhong University of Science and Technology, 430074, Wuhan, China</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">700</subfield>
   <subfield code="E">1-</subfield>
   <subfield code="a">Sitaraman</subfield>
   <subfield code="D">Suresh</subfield>
   <subfield code="u">The George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, 30332, Atlanta, GA, USA</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">773</subfield>
   <subfield code="E">0-</subfield>
   <subfield code="t">Journal of Electronic Materials</subfield>
   <subfield code="d">Springer US; http://www.springer-ny.com</subfield>
   <subfield code="g">42/2(2013-02-01), 230-239</subfield>
   <subfield code="x">0361-5235</subfield>
   <subfield code="q">42:2&lt;230</subfield>
   <subfield code="1">2013</subfield>
   <subfield code="2">42</subfield>
   <subfield code="o">11664</subfield>
  </datafield>
  <datafield tag="900" ind1=" " ind2="7">
   <subfield code="a">Metadata rights reserved</subfield>
   <subfield code="b">Springer special CC-BY-NC licence</subfield>
   <subfield code="2">nationallicence</subfield>
  </datafield>
  <datafield tag="898" ind1=" " ind2=" ">
   <subfield code="a">BK010053</subfield>
   <subfield code="b">XK010053</subfield>
   <subfield code="c">XK010000</subfield>
  </datafield>
  <datafield tag="949" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="F">NATIONALLICENCE</subfield>
   <subfield code="b">NL-springer</subfield>
  </datafield>
 </record>
</collection>
