naa a22 4500 510804926 CHVBK 20180411083412.0 cr unu---uuuuu 180411e20130201xx s 000 0 eng 10.1007/s11664-012-2209-0 doi (NATIONALLICENCE)springer-10.1007/s11664-012-2209-0 Mechanisms of Sn Hillock Growth in Vacuum by InSitu Nanoindentation in a Scanning Electron Microscope (SEM) [Elektronische Daten] [J.J. Williams, N.C. Chapman, N. Chawla] Nanoindentation is an excellent technique to quantitatively probe the Sn film surface and to introduce controlled compressive stresses. In this work, we have conducted a long-term study of whisker growth in Sn films plated on Cu. Insitu indentations were conducted in a scanning electron microscope under vacuum, to elucidate the effect of whiskering without significant oxidation. The evolution of whisker growth up to 1500h was studied. Measurements of whisker height and width were used to determine the relationship between nodule volume and time. Extensive nodule growth was observed at indentations. Competing mass flow between indentations was observed, with some indentations exhibiting extensive growth, while the growth of others arrested within 100h. It can be postulated that, when stresses are relieved slowly, hillock heights grow nearly linearly over time. When stress is relieved quickly, a sigmoidal-type curve (arresting growth) is predicted. TMS, 2012 Sn whiskering nationallicence nanoindentation nationallicence nodule growth nationallicence Williams J.J. Materials Science and Engineering, School for Engineering of Matter, Transport, and Energy, Arizona State University, 85287-6106, Tempe, AZ, USA aut Chapman N.C. Materials Science and Engineering, School for Engineering of Matter, Transport, and Energy, Arizona State University, 85287-6106, Tempe, AZ, USA aut Chawla N. Materials Science and Engineering, School for Engineering of Matter, Transport, and Energy, Arizona State University, 85287-6106, Tempe, AZ, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/2(2013-02-01), 224-229 0361-5235 42:2<224 2013 42 11664 https://doi.org/10.1007/s11664-012-2209-0 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2209-0 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Williams J.J. Materials Science and Engineering, School for Engineering of Matter, Transport, and Energy, Arizona State University, 85287-6106, Tempe, AZ, USA aut NATIONALLICENCE 700 1- Chapman N.C. Materials Science and Engineering, School for Engineering of Matter, Transport, and Energy, Arizona State University, 85287-6106, Tempe, AZ, USA aut NATIONALLICENCE 700 1- Chawla N. Materials Science and Engineering, School for Engineering of Matter, Transport, and Energy, Arizona State University, 85287-6106, Tempe, AZ, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/2(2013-02-01), 224-229 0361-5235 42:2<224 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer