naa a22 4500 510804950 CHVBK 20180411083412.0 cr unu---uuuuu 180411e20131101xx s 000 0 eng 10.1007/s11664-013-2680-2 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2680-2 Postgrowth Annealing of CdTe Layers Grown on Si Substrates by Metalorganic Vapor-Phase Epitaxy [Elektronische Daten] [K. Yasuda, M. Niraula, S. Namba, T. Kondo, S. Muramatsu, H. Yamashita, Y. Wajima, Y. Agata] Annealing conditions of CdTe layers grown on Si substrates by metalorganic vapor-phase epitaxy were studied. Typically, 3-μm-thick n-type (211) CdTe layers were annealed for 60s in flowing hydrogen at atmospheric pressure by covering their surfaces with bulk CdTe wafers. At annealing temperatures above 700°C, improvement of crystal quality was confirmed from full-width at half-maximum values of double-crystal rocking-curve measurements and x-ray diffraction measurements. Photoluminescence measurements revealed no deterioration of electrical properties in the annealed n-CdTe layers. Furthermore, annealing at 900°C improved the performance of radiation detectors with structure of p-like CdTe/n-CdTe/n +-Si substrate. TMS, 2013 CdTe/Si nationallicence MOVPE nationallicence rapid thermal annealing nationallicence radiation detectors nationallicence Yasuda K. Graduate School of Engineering, Nagoya Institute of Technology, Gokiso, Showa, 466-8555, Nagoya, Japan aut Niraula M. Graduate School of Engineering, Nagoya Institute of Technology, Gokiso, Showa, 466-8555, Nagoya, Japan aut Namba S. Graduate School of Engineering, Nagoya Institute of Technology, Gokiso, Showa, 466-8555, Nagoya, Japan aut Kondo T. Graduate School of Engineering, Nagoya Institute of Technology, Gokiso, Showa, 466-8555, Nagoya, Japan aut Muramatsu S. Graduate School of Engineering, Nagoya Institute of Technology, Gokiso, Showa, 466-8555, Nagoya, Japan aut Yamashita H. Graduate School of Engineering, Nagoya Institute of Technology, Gokiso, Showa, 466-8555, Nagoya, Japan aut Wajima Y. Graduate School of Engineering, Nagoya Institute of Technology, Gokiso, Showa, 466-8555, Nagoya, Japan aut Agata Y. Graduate School of Engineering, Nagoya Institute of Technology, Gokiso, Showa, 466-8555, Nagoya, Japan aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3125-3128 0361-5235 42:11<3125 2013 42 11664 https://doi.org/10.1007/s11664-013-2680-2 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2680-2 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Yasuda K. Graduate School of Engineering, Nagoya Institute of Technology, Gokiso, Showa, 466-8555, Nagoya, Japan aut NATIONALLICENCE 700 1- Niraula M. Graduate School of Engineering, Nagoya Institute of Technology, Gokiso, Showa, 466-8555, Nagoya, Japan aut NATIONALLICENCE 700 1- Namba S. Graduate School of Engineering, Nagoya Institute of Technology, Gokiso, Showa, 466-8555, Nagoya, Japan aut NATIONALLICENCE 700 1- Kondo T. Graduate School of Engineering, Nagoya Institute of Technology, Gokiso, Showa, 466-8555, Nagoya, Japan aut NATIONALLICENCE 700 1- Muramatsu S. Graduate School of Engineering, Nagoya Institute of Technology, Gokiso, Showa, 466-8555, Nagoya, Japan aut NATIONALLICENCE 700 1- Yamashita H. Graduate School of Engineering, Nagoya Institute of Technology, Gokiso, Showa, 466-8555, Nagoya, Japan aut NATIONALLICENCE 700 1- Wajima Y. Graduate School of Engineering, Nagoya Institute of Technology, Gokiso, Showa, 466-8555, Nagoya, Japan aut NATIONALLICENCE 700 1- Agata Y. Graduate School of Engineering, Nagoya Institute of Technology, Gokiso, Showa, 466-8555, Nagoya, Japan aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3125-3128 0361-5235 42:11<3125 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer