naa a22 4500 510805000 CHVBK 20180411083412.0 cr unu---uuuuu 180411e20131101xx s 000 0 eng 10.1007/s11664-013-2676-y doi (NATIONALLICENCE)springer-10.1007/s11664-013-2676-y The Effect of Subbandgap Illumination on the Bulk Resistivity of CdZnTe [Elektronische Daten] [Jonathan Wright, Aaron Washington II, Martine Duff, Arnold Burger, Michael Groza, Liviu Matei, Vladimir Buliga] The variation in bulk resistivity during infrared (IR) illumination above 950nm of state-of-the-art CdZnTe (CZT) crystals grown using the traveling heating method or the modified Bridgman method is documented. The change in steady-state current with and without illumination is also evaluated. The influence of secondary phases (SP) on current-voltage (I-V) characteristics is discussed using IR transmission microscopy to determine the defect concentration within the crystal bulk. SP present within the CZT are connected to the existence of deep, IR-excitable traps within the bandgap. TMS (outside the USA), 2013 CdZnTe nationallicence bulk resistivity nationallicence IR illumination nationallicence defect distribution nationallicence secondary phases nationallicence current-voltage ( I - V ) nationallicence Wright Jonathan Savannah River National Laboratory, 29808, Aiken, SC, USA aut Washington II Aaron Savannah River National Laboratory, 29808, Aiken, SC, USA aut Duff Martine Savannah River National Laboratory, 29808, Aiken, SC, USA aut Burger Arnold Fisk University, 37208-3051, Nashville, TN, USA aut Groza Michael Fisk University, 37208-3051, Nashville, TN, USA aut Matei Liviu Fisk University, 37208-3051, Nashville, TN, USA aut Buliga Vladimir Fisk University, 37208-3051, Nashville, TN, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3119-3124 0361-5235 42:11<3119 2013 42 11664 https://doi.org/10.1007/s11664-013-2676-y text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2676-y text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Wright Jonathan Savannah River National Laboratory, 29808, Aiken, SC, USA aut NATIONALLICENCE 700 1- Washington II Aaron Savannah River National Laboratory, 29808, Aiken, SC, USA aut NATIONALLICENCE 700 1- Duff Martine Savannah River National Laboratory, 29808, Aiken, SC, USA aut NATIONALLICENCE 700 1- Burger Arnold Fisk University, 37208-3051, Nashville, TN, USA aut NATIONALLICENCE 700 1- Groza Michael Fisk University, 37208-3051, Nashville, TN, USA aut NATIONALLICENCE 700 1- Matei Liviu Fisk University, 37208-3051, Nashville, TN, USA aut NATIONALLICENCE 700 1- Buliga Vladimir Fisk University, 37208-3051, Nashville, TN, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3119-3124 0361-5235 42:11<3119 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer