naa a22 4500 510805027 CHVBK 20180411083412.0 cr unu---uuuuu 180411e20131101xx s 000 0 eng 10.1007/s11664-013-2810-x doi (NATIONALLICENCE)springer-10.1007/s11664-013-2810-x Nitrogen Plasma Doping of Single-Crystal ZnTe and CdZnTe on Si by MBE [Elektronische Daten] [Richard Kodama, Thomas Seldrum, Xiaojin Wang, J. Park, Eric Colegrove, Xin Zheng, Ramesh Dhere, Siva Sivananthan] We have investigated insitu p-type doping of ZnTe and CdZnTe on Si(211) by molecular beam epitaxy using a radiofrequency (RF)-nitrogen plasma source for application to multijunction II-VI-based solar cells. CdZnTe would be used as a wide-gap top cell in a monolithic multijunction device, and ZnTe or CdZnTe could be used for the p-side of tunnel junctions. Highly p-type material is required for producing the high-quality tunnel junctions crucial for maintaining current flow, and p-doping of order 1017cm−3 is required for the generation of a large built-in potential in the absorber region of solar cells. Our uniformly doped films exhibited good Hall characteristics, especially considering the large lattice mismatch between Si and either ZnTe or CdZnTe. Crystal quality was examined by x-ray diffraction. Nitrogen incorporation was examined as a function of the source-gas dilution with argon. A sample with layers of CdZnTe doped using 1% to 100% nitrogen was grown on nominally undoped CdZnTe and analyzed using secondary-ion mass spectrometry. The nitrogen incorporation differed by only a factor of 10, despite the factor of 100 difference in the nitrogen concentration in the plasma, indicating a saturation effect. TMS, 2013 ZnTe nationallicence CdZnTe nationallicence p -type doping nationallicence MBE nationallicence RF-plasma source nationallicence nitrogen nationallicence Kodama Richard EPIR Technologies Inc., 60440, Bolingbrook, IL, USA aut Seldrum Thomas EPIR Technologies Inc., 60440, Bolingbrook, IL, USA aut Wang Xiaojin EPIR Technologies Inc., 60440, Bolingbrook, IL, USA aut Park J. University of Illinois at Chicago, 60607, Chicago, IL, USA aut Colegrove Eric University of Illinois at Chicago, 60607, Chicago, IL, USA aut Zheng Xin University of Illinois at Chicago, 60607, Chicago, IL, USA aut Dhere Ramesh EpiSolar, 60440, Bolingbrook, IL, USA aut Sivananthan Siva University of Illinois at Chicago, 60607, Chicago, IL, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3239-3242 0361-5235 42:11<3239 2013 42 11664 https://doi.org/10.1007/s11664-013-2810-x text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2810-x text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kodama Richard EPIR Technologies Inc., 60440, Bolingbrook, IL, USA aut NATIONALLICENCE 700 1- Seldrum Thomas EPIR Technologies Inc., 60440, Bolingbrook, IL, USA aut NATIONALLICENCE 700 1- Wang Xiaojin EPIR Technologies Inc., 60440, Bolingbrook, IL, USA aut NATIONALLICENCE 700 1- Park J. University of Illinois at Chicago, 60607, Chicago, IL, USA aut NATIONALLICENCE 700 1- Colegrove Eric University of Illinois at Chicago, 60607, Chicago, IL, USA aut NATIONALLICENCE 700 1- Zheng Xin University of Illinois at Chicago, 60607, Chicago, IL, USA aut NATIONALLICENCE 700 1- Dhere Ramesh EpiSolar, 60440, Bolingbrook, IL, USA aut NATIONALLICENCE 700 1- Sivananthan Siva University of Illinois at Chicago, 60607, Chicago, IL, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3239-3242 0361-5235 42:11<3239 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer