naa a22 4500 510805035 CHVBK 20180411083412.0 cr unu---uuuuu 180411e20131101xx s 000 0 eng 10.1007/s11664-013-2737-2 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2737-2 Theoretical Modeling of HOT HgCdTe Barrier Detectors for the Mid-Wave Infrared Range [Elektronische Daten] [P. Martyniuk, W. Gawron, A. Rogalski] This paper reports on theoretical modeling of medium-wavelength infrared HgCdTe barrier infrared detector (BIRD) photoelectrical performance. BIRD HgCdTe detectors were simulated with the commercially available software APSYS. Detailed analysis of the detector performance such as dark current, photocurrent, resistance-area product, detectivity versus applied bias, operating temperature, and structural parameters (absorber doping, barrier composition) was performed to determine the optimal operating conditions. It is shown that higher operation temperature conditions achievable with commonly used thermoelectric coolers allow detectivities of D=9.5×1010cmHz1/2/W and D *=1.5×1011cmHz1/2/W at T=200K to be obtained for the correct absorber doping for nBnnn+ and nBnpn+, respectively. R 0 A for the nBnnn+ detector was found to range from 200Ωcm2 to 0.6Ωcm2 at T=200K to 300K, respectively. The Author(s), 2013 HgCdTe nationallicence unipolar barrier nationallicence nBnn(p) nationallicence nBnn(p)n+ nationallicence Auger suppression nationallicence photoelectric gain nationallicence Martyniuk P. Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908, Warsaw, Poland aut Gawron W. Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908, Warsaw, Poland aut Rogalski A. Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908, Warsaw, Poland aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3309-3319 0361-5235 42:11<3309 2013 42 11664 https://doi.org/10.1007/s11664-013-2737-2 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2737-2 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Martyniuk P. Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908, Warsaw, Poland aut NATIONALLICENCE 700 1- Gawron W. Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908, Warsaw, Poland aut NATIONALLICENCE 700 1- Rogalski A. Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908, Warsaw, Poland aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3309-3319 0361-5235 42:11<3309 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer