naa a22 4500 510805043 CHVBK 20180411083412.0 cr unu---uuuuu 180411e20131101xx s 000 0 eng 10.1007/s11664-013-2688-7 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2688-7 TEM Characterization of HgCdTe/CdTe Grown on GaAs(211)B Substrates [Elektronische Daten] [Jae Kim, R. Jacobs, L. Almeida, M. Jaime-Vasquez, C. Nozaki, David Smith] A microstructural study of HgCdTe/CdTe/GaAs(211)B and CdTe/GaAs(211)B heterostructures grown using molecular beam epitaxy (MBE) was carried out using transmission electron microscopy and small-probe microanalysis. High-quality MBE-grown CdTe on GaAs(211)B substrates was demonstrated to be a viable composite substrate platform for HgCdTe growth. In addition, analysis of interfacial misfit dislocations and residual strain showed that the CdTe/GaAs interface was fully relaxed except in localized regions where GaAs surface polishing had caused small pits. In the case of HgCdTe/CdTe/GaAs(211)B, the use of thin HgTe buffer layers between HgCdTe and CdTe for improving the HgCdTe crystal quality was also investigated. TMS, 2013 HgCdTe nationallicence CdTe/GaAs(211)B nationallicence MBE nationallicence TEM nationallicence EDXS nationallicence Kim Jae School of Engineering for Matter, Transport and Energy, Arizona State University, Tempe, AZ, USA aut Jacobs R. U.S. Army RDECOM CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA aut Almeida L. U.S. Army RDECOM CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA aut Jaime-Vasquez M. U.S. Army RDECOM CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA aut Nozaki C. U.S. Army RDECOM CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA aut Smith David Department of Physics, Arizona State University, Tempe, AZ, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3142-3147 0361-5235 42:11<3142 2013 42 11664 https://doi.org/10.1007/s11664-013-2688-7 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2688-7 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kim Jae School of Engineering for Matter, Transport and Energy, Arizona State University, Tempe, AZ, USA aut NATIONALLICENCE 700 1- Jacobs R. U.S. Army RDECOM CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA aut NATIONALLICENCE 700 1- Almeida L. U.S. Army RDECOM CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA aut NATIONALLICENCE 700 1- Jaime-Vasquez M. U.S. Army RDECOM CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA aut NATIONALLICENCE 700 1- Nozaki C. U.S. Army RDECOM CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA aut NATIONALLICENCE 700 1- Smith David Department of Physics, Arizona State University, Tempe, AZ, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3142-3147 0361-5235 42:11<3142 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer