naa a22 4500 510805051 CHVBK 20180411083412.0 cr unu---uuuuu 180411e20131101xx s 000 0 eng 10.1007/s11664-013-2654-4 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2654-4 Characterization of Plasma Etching Process Damage in HgCdTe [Elektronische Daten] [A. Gaucher, J. Baylet, J. Rothman, E. Martinez, C. Cardinaud] Microstructural and electrical damage to n-type long-wavelength infrared Hg1−x Cd x Te (MCT) following CH4-H2-based inductively coupled plasma etching has been investigated. While the damage from such etching processes to MCT has previously been characterized for planar full-wafer etching, in this communication we present the results of an investigation of the damage incurred to etched sidewalls, whose faces constitute the majority of the etched surface in novel architectures. Auger electron spectroscopy was used to monitor the evolution of X Cd beneath etched surfaces. So far, no X Cd evolution has been detected underneath etched surfaces within a ΔX Cd=0.02 resolution. Conductivity and minority-carrier lifetime have been studied on patterned photoconductors, from which it is possible to extract a surface recombination velocity (SRV). These studies have shown surface conductivity variations and SRV shifts of several orders of magnitude, depending on the etching process used. TMS, 2013 HgCdTe nationallicence inductively coupled plasma (ICP) nationallicence etched sidewalls nationallicence Auger electron spectroscopy nationallicence minority-carrier lifetime nationallicence Gaucher A. CEA-LETI, Minatec Campus, 17 rue des Martyrs, 38054, Grenoble Cedex 9, France aut Baylet J. CEA-LETI, Minatec Campus, 17 rue des Martyrs, 38054, Grenoble Cedex 9, France aut Rothman J. CEA-LETI, Minatec Campus, 17 rue des Martyrs, 38054, Grenoble Cedex 9, France aut Martinez E. CEA-LETI, Minatec Campus, 17 rue des Martyrs, 38054, Grenoble Cedex 9, France aut Cardinaud C. Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322, Nantes Cedex 3, France aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3006-3014 0361-5235 42:11<3006 2013 42 11664 https://doi.org/10.1007/s11664-013-2654-4 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2654-4 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Gaucher A. CEA-LETI, Minatec Campus, 17 rue des Martyrs, 38054, Grenoble Cedex 9, France aut NATIONALLICENCE 700 1- Baylet J. CEA-LETI, Minatec Campus, 17 rue des Martyrs, 38054, Grenoble Cedex 9, France aut NATIONALLICENCE 700 1- Rothman J. CEA-LETI, Minatec Campus, 17 rue des Martyrs, 38054, Grenoble Cedex 9, France aut NATIONALLICENCE 700 1- Martinez E. CEA-LETI, Minatec Campus, 17 rue des Martyrs, 38054, Grenoble Cedex 9, France aut NATIONALLICENCE 700 1- Cardinaud C. Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322, Nantes Cedex 3, France aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3006-3014 0361-5235 42:11<3006 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer