naa a22 4500 51080506X CHVBK 20180411083412.0 cr unu---uuuuu 180411e20131101xx s 000 0 eng 10.1007/s11664-013-2776-8 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2776-8 Numerical Analysis of Current-Voltage Characteristics of LWIR nBn and p -on- n HgCdTe Photodetectors [Elektronische Daten] [M. Kopytko, K. Jóźwikowski] We performed numerical analysis of the current-voltage characteristics of long-wavelength infrared unipolar HgCdTe nBn photodetectors and compared those results with those of conventional p-on-n HgCdTe photodiodes. A computer program was applied to explain in detail the impact of the charge carrier generation and recombination processes on current densities. In our model the carrier diffusion, thermal generation-recombination, band-to-band tunneling, trap-assisted tunneling (via states located at mercury vacancies as well as dislocation cores), and impact ionization are included as potential limiting mechanisms. To validate the model, we compared the theoretical predictions with experimental data of high-quality p-on-n photodiodes published in the literature. The Author(s), 2013 Generation-recombination processes nationallicence LWIR nationallicence HgCdTe nationallicence nBn nationallicence photodiode nationallicence photodetector nationallicence Kopytko M. Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908, Warsaw, Poland aut Jóźwikowski K. Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908, Warsaw, Poland aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3211-3216 0361-5235 42:11<3211 2013 42 11664 https://doi.org/10.1007/s11664-013-2776-8 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2776-8 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kopytko M. Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908, Warsaw, Poland aut NATIONALLICENCE 700 1- Jóźwikowski K. Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908, Warsaw, Poland aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3211-3216 0361-5235 42:11<3211 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer