naa a22 4500 510805086 CHVBK 20180411083413.0 cr unu---uuuuu 180411e20131101xx s 000 0 eng 10.1007/s11664-013-2781-y doi (NATIONALLICENCE)springer-10.1007/s11664-013-2781-y Variable-Field Hall Measurement and Transport in LWSingle-Layer n -Type MBE Hg1− x Cd x Te [Elektronische Daten] [A. Brown, M. Jaime-Vasquez, L. Almeida, J. Arias, C. Lennon, R. Jacobs, J. Pellegrino, S. Sivananthan] Molecular beam epitaxy n-type long-wavelength infrared (LWIR) Hg1−x Cd x Te (MCT) has been investigated using variable-field Hall measurement in the temperature range from 50K to 293K. A quantitative mobility spectrum analysis technique has been used to determine the role of multicarrier transport properties with respect to epilayer growth on lattice-matched cadmium zinc telluride, as well as lattice-mismatched silicon (Si) and gallium arsenide (GaAs) buffered substrates. Overall, after postgrowth annealing, all layers were found to possess three distinct electron species, which were postulated to originate from the bulk, transitional (or higher-x-value) regions, and an interfacial/surface layer carrier. Further, the mobility and concentration with respect to temperature were analyzed for all carriers, showing the expected mobility temperature dependence and intrinsic behavior of the bulk electron. Electrons from transitional regions were seen to match expected values based on the carrier concentration of the resolved peak. At high temperature, the lowest-mobility carrier was consistent with the properties of a surface carrier, while below 125K it was postulated that interfacial-region electrons may influence peak values. After corrections for x-value and doping density at 77K, bulk electron mobility in excess of 105cm2V−1s−1 was observed in all epilayers, in line with expected values for lightly doped n-type LWIR material. Results indicate that fundamental conduction properties of electrons in MCT layers are unchanged by choice of substrate. TMS (outside the USA), 2013 HgCdTe nationallicence electrical characterization nationallicence molecular beam epitaxy nationallicence quantitative mobility spectrum analysis (QMSA) nationallicence Hall-effect measurement nationallicence multicarrier conduction nationallicence Brown A. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA aut Jaime-Vasquez M. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA aut Almeida L. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA aut Arias J. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA aut Lennon C. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA aut Jacobs R. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA aut Pellegrino J. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA aut Sivananthan S. Microphysics Laboratory, University of Illinois at Chicago, Chicago, IL, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3224-3230 0361-5235 42:11<3224 2013 42 11664 https://doi.org/10.1007/s11664-013-2781-y text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2781-y text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Brown A. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA aut NATIONALLICENCE 700 1- Jaime-Vasquez M. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA aut NATIONALLICENCE 700 1- Almeida L. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA aut NATIONALLICENCE 700 1- Arias J. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA aut NATIONALLICENCE 700 1- Lennon C. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA aut NATIONALLICENCE 700 1- Jacobs R. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA aut NATIONALLICENCE 700 1- Pellegrino J. U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA aut NATIONALLICENCE 700 1- Sivananthan S. Microphysics Laboratory, University of Illinois at Chicago, Chicago, IL, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/11(2013-11-01), 3224-3230 0361-5235 42:11<3224 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer